Surface Potential: Measuring Confined Electrons & Holes

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SUMMARY

Surface potential is the electrostatic potential energy associated with confined charges at a surface, measurable using a Kelvin Probe Microscope. The work function, which indicates the energy required for electrons to escape from a material's surface, varies with material inhomogeneities. In regions of negative surface potential, electrons are confined, while holes are found in areas of positive surface potential. Free holes in hole transport semiconductors are more likely to be trapped in regions with a higher work function, correlating with higher surface potential.

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  • Understanding of surface potential and electrostatic principles
  • Familiarity with Kelvin Probe Microscopy techniques
  • Knowledge of work function and its implications in semiconductor physics
  • Concepts of hole transport in semiconductors
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sinayu71
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:rolleyes: surface potential is defined as the electrostatic potential energy of a surface confined charges. By Kelvin probe microscope, the the surface potential can be measured and the variation from negative to positive can be seen at different region on the interface.
My question is: is it correct to say that the area with negative surface potential has already confined certain amount of electrons whereas the holes has been confined in some areas with positive surface potential?
 
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Hello,

Kelvin Probe Microscopes measure the "work function" of a materials surface. There are two ways (yielding two different resolutions, but let's forget about the tunneling method) to measure the work function of a surface: The lower resolution, phenomenologically classical method relies on the electrons overcoming the work function of a surface prior to conducting to the probe. The work function of a material will change with inhomogeneities in the material (different phases etc..). So back to your question. Remember that potentials are relative quantities. There isn't a "positive region" just a region where the work function is higher than the surrounding regions.
Hope this helps.

Regards
Modey3
 
Hi Modey 3: thank you for the answer.

For hole transport semiconductors, is that correct to say free holes traveling at interface will be easily trapped in the area with relatively higher workfunction ( also shows a relatively higher surface potential)?
 

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