Unipolar CMOS: Semiconductor Breakthrough?

AI Thread Summary
Unipolar CMOS, proposed by Prof T P Ma, aims to enhance semiconductor performance by eliminating P-N junctions, potentially increasing efficiency by 3 to 20 times based on materials used. This technology allows for relaxed scaling, starting with 0.5 µm devices that outperform traditional 45 nm silicon CMOS. The absence of PMOS transistors enables faster switching capabilities. The discussion also briefly mentions the single electron transistor as a related innovation. Overall, Unipolar CMOS represents a significant advancement in semiconductor technology.
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Here's a story about a new proposal from Prof T P Ma, called Unipolar CMOS:

http://www.semiconductor.net/article/CA6602780.html?desc=topstory

This may take the P out of P-N semiconductors, boosting performance by 3 to 20 times, depending upon the material.


Also, scaling could be relaxed, starting with perhaps 0.5 µm devices while still getting a performance advantage over 45 nm silicon CMOS.
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We can get rid of the PMOS transistors and switch much faster.”
 
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Engineering news on Phys.org
Podcast of interview with Prof TP Ma on Unipolar CMOS:

http://www.semiconductor.net/contents/media/Yale_TP_Ma.mp3?nid=3666
 
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