The higher is the doping level then the narrower is the depletion region for any given reverse bias voltage. A narrower depletion region means that voltage is "blocked" over a shorter distance, meaning that the peak electric field is higher.Viswanathan.M said:In Zener Diode, In highly Doped diode,the breakdown(Zener breakdown) occurs in small voltage. How?
The width of the depletion region in a diode is determined by the number of dopant atoms in the semiconductor material. In highly doped diodes, there are a larger number of dopant atoms, leading to a smaller depletion region width. This is because the dopant atoms contribute more free carriers, reducing the size of the depletion region.
The width of the depletion region plays a crucial role in the performance of a diode. A smaller depletion region width results in a lower barrier for charge carriers, allowing for easier flow of current through the diode. This leads to a higher conductivity and better overall performance of the diode.
Yes, the width of the depletion region in highly doped diodes can be controlled through the process of doping. By adjusting the concentration of dopant atoms in the semiconductor material, the width of the depletion region can be varied to suit the desired application and performance requirements of the diode.
One potential disadvantage of a smaller depletion region width in highly doped diodes is the increased likelihood of breakdown or failure due to a high electric field. This is because a smaller depletion region means that a higher electric field is needed to maintain the same amount of charge separation, making the diode more susceptible to damage.
The width of the depletion region in highly doped diodes is inversely proportional to temperature. As temperature increases, the thermal energy of the carriers increases, leading to a larger diffusion rate and a decrease in the width of the depletion region. This can result in a decrease in the performance of the diode at higher temperatures.