|Apr29-12, 05:48 PM||#1|
(Reverse) Schottky Diode Question
Is a reverse Schottky diode possible?
I understand the basics of the Schotkky barrier/rectifier commonly achieved by a metal/semiconductor interface.
Recently, it was suggested to me that a "reverse" Schottky junction is possible if the metal is placed against a fully depleted, high carrier concentration semiconductor. Further, this would result in a metal accelerating and reducing recombination of holes for instance in a p-type semiconductor.
I'm skeptical but lack the physics skills for rebuttal.
|May1-12, 12:05 AM||#2|
400 views but no replies?
Can I explain something better?
|May31-12, 01:49 AM||#3|
I don't understand the question. Yes, research Ohmic.
Otherwise, it sounds like you're suggestion that equilibrium isn't achieved?
in general; when ever two potential differences exist, then a field results. When the material with their respective valence bands and Fermi energy levels are joined, where a depletion region exists, then the net current due to recombination and even thermal electron flows, is ALWAYS 0,for both p or n type contacts. so holes would accelerate across a depleted region. but there will be not net effect.
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