Calculating moleculalar flux from deposition rate.

AI Thread Summary
To calculate the molecular flux of Silicon dioxide from a deposition rate of 1000 Å/minute, ideal gas theory is not applicable due to SiO2's non-ideal behavior. The correct molecular flux is approximately 3.8E15 molecules/cm² per second. The deposition process involves evaporation using an electron gun in ultra-high vacuum conditions of around 10^-9 Torr. Understanding the relationship between deposition rate and molecular flux is crucial for determining flux ratios. Accurate calculations are essential for effective material deposition in thin film applications.
Ravian
Messages
40
Reaction score
0
I have deposition rate of Silicon dioxide as 1000A/minute. I need to calculate molecular flux to the surface. First I tried to use ideal gas theory but since SiO2 is not ideal gas therefore my answer was completely wrong. I am disoriented. Can anybody help. I know the answer is 3.8E15 molecules/cm2 second.
Thanks

PS: It is not homework assignment. I need to calculate it to determine flux ratio.
 
Physics news on Phys.org
What is the process for deposition?
 
It is evaporated using e-gun in UHV of around 10-9 Torr.
 
I was using the Smith chart to determine the input impedance of a transmission line that has a reflection from the load. One can do this if one knows the characteristic impedance Zo, the degree of mismatch of the load ZL and the length of the transmission line in wavelengths. However, my question is: Consider the input impedance of a wave which appears back at the source after reflection from the load and has traveled for some fraction of a wavelength. The impedance of this wave as it...

Similar threads

Back
Top