DC biasing in MOSFET Rectifier

In summary, the conversation is about a beginner in Analog IC design working on a project to design a high sensitivity rectifier using Synopsys simulator. The design specifications include a technology of 130nm, frequency range of 900MHz to 2.4GHz, input voltage range of 0.2V to 1.0V, and a sensitivity of -32dBm with a PCE of greater than 80%. The individual is stuck on the DC biasing of the MOSFET transistor and is looking for resources on how to start and if it is different from amplifier design. They also mention a journal that discusses the importance of operating in the sub-threshold region for low input power. The summary concludes by suggesting research
  • #1
Peiqii Tan
1
0
Hi there,

I m a beginner in Analog IC design field. Currently, I have a project which is to design a high sensitivity rectifier by using Synopsys simulator. However, I m stuck in the beginning part which is the DC biasing of MOSFET transistor.

The design specification as below:
Technology : 130nm
Frequency : 900MHz - 2.4GHz
input voltage : 0.2V - 1.0V
sensitivity : -32dBm
PCE : greater than 80%

1. How to do DC biasing? how to start it? Is any link can provide? Is it different with the amplifier design?

2. As mentioned in the journal, in order for rectifier to work with very low input power, all the transistors of rectifier should operate in the sub-threshold region. I m not clear with this part, suppose sub-threshold region will have no conduction path between drain and source. How could it able to trigger the transistor?
 
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  • #2
Peiqii Tan said:
As mentioned in the journal,
What journal?

From wikipedia: https://en.wikipedia.org/wiki/Subthreshold_conduction

"In digital circuits, subthreshold conduction is generally viewed as a parasitic leakage in a state that would ideally have no current. In micropower analog circuits, on the other hand, weak inversion is an efficient operating region, and subthreshold is a useful transistor mode around which circuit functions are designed"

You need to research and understand subthreshold analog circuits.
 

1. What is DC biasing in MOSFET rectifier?

DC biasing in MOSFET rectifier refers to the method of providing a steady and stable direct current (DC) voltage to the gate terminal of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) for proper operation as a rectifier. This is necessary to establish the correct gate-source voltage for the desired output current.

2. Why is DC biasing important in MOSFET rectifier?

DC biasing is important in MOSFET rectifier because it helps to regulate the output current and maintain a stable operating point. Without proper biasing, the MOSFET may not function correctly or could even be damaged due to overloading or overheating.

3. How is DC biasing achieved in MOSFET rectifier?

DC biasing in MOSFET rectifier is typically achieved by connecting a resistive load from the gate terminal to a fixed DC voltage source. This creates a voltage divider network that establishes the desired gate-source voltage and allows for precise control of the output current.

4. What are the different types of DC biasing techniques used in MOSFET rectifier?

The two most commonly used DC biasing techniques in MOSFET rectifier are fixed biasing and self-biasing. Fixed biasing involves using a fixed DC voltage source, while self-biasing uses the MOSFET's own output voltage to establish the gate-source voltage.

5. How does DC biasing affect the performance of MOSFET rectifier?

DC biasing has a significant impact on the performance of MOSFET rectifier, as it directly affects the output current and efficiency of the device. Proper biasing ensures stable and efficient operation, while incorrect or inadequate biasing can lead to inaccurate output and potential damage to the MOSFET.

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