What happens when applying a constant current source to a biased BJT?

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In summary, when a voltage of 15V is applied to the base of a BJT with a 1k resistor, it is biased with 15/1000=.015amps. A constant current source applied to the emitter/collector can either be less than, more than, or equal to the beta*baseCurrent. The current source will provide the necessary voltage to keep the current constant, but it also has voltage limits. The BJT will be in the forward active mode if the collector voltage drops until it is saturated, and the Ic = beta * Ib relation no longer holds. To put the BJT into active mode when the current source is connected to the collector, one can
  • #1
Ry122
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What happens if for argument's sake you have a voltage of 15V and a resistor of 1k connected to the base of a BJT thus biasing it with 15/1000=.015amps

and then you apply a constant current source to the emitter/collector that is

1. less than beta*baseCurrent
2. more than beta*baseCurrent
3. Equal to beta*baseCurrent
 
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Ry122 said:
What happens if for argument's sake you have a voltage of 15V and a resistor of 1k connected to the base of a BJT thus biasing it with 15/1000=.015amps
With a grounded emitter, you'll have less than 15 mA base current due to the base-emitter voltage drop. This is also a terrible way to bias the BJT, since you're relying on knowing device parameters that vary wildly. You should use something like a stiff voltage divider instead to set the quiescent current.

Ry122 said:
and then you apply a constant current source to the emitter/collector that is

1. less than beta*baseCurrent
2. more than beta*baseCurrent
3. Equal to beta*baseCurrent
With the current source oriented correctly, it will just provide whatever current you set it to by applying the needed voltage across the BJT, which will be small if you give the BJT enough base drive.
 
  • #3
Is this a homework question? If so, have you seen the homework template? You need to make an attempt before we can help. You might start by thinking about what a constant current source does. For example, what happens if you have a constant current source and apply it to an open circuit?
 
  • #4
no this is not a homework question. I like pondering about things is all.

Your question can be easily answered if referring to resistive circuits but semiconductors are different.

with a varying R, a current source will supply the voltage necessary to keep the current constant.

With a BJT though, the base determines what it 'wants' the collector to have flowing through it. If a current source is applied to the collector though, the two are kind of at odds aren't they? They both 'want' two different things. Someones not going to get what they want.
 
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  • #5
Ry122 said:
With a BJT though, the base determines what it 'wants' the collector to have flowing through it.
That's not how it works. It's not a great model, but think of the BJT as more of a variable resistance. All the BJT can do is be either fully on, off or somewhere in between, i.e. it can, approximately, act as a short circuit, an open circuit or some load in between. How does that affect the current source?
 
  • #6
As you said, the current source will supply the voltage necessary to keep the current constant. But it has voltage limits also. If it takes 1,000,000 volts to keep the current constant, this it is probably going to hit its voltage limits before it can keep the current constant. So the question is whether the current source will be able to keep the current constant or whether it will hit a voltage limit. Also, remember that the model of the BJT having collector current = beta * base current is only true if it is in the forward active mode. If it goes into saturation, for example, this no longer holds. So in your first case, the collector voltage will just drop until the BJT is saturated and the Ic = beta * Ib relation no longer holds.
 
  • #7
If this current source is in "collector side" then transistor will enter saturation if Ib*β > Isource --- >15mA > Icource and Ie = 15mA + Isource.
But if we put this current source into "emitter side" ( from emitter to ground) the Ib current will be equal to Ib = Isource/(β + 1) and transistor will be in active region as long as 15V < Ib*1kΩ
 
  • #8
Thanks for the explanations. Could someone also explain what happens in terms of the hole/electron physics?
 
  • #9
Jony, how would you put it into active mode when the current source is connected to the collector?
 
  • #10
Ry122 said:
Could someone also explain what happens in terms of the hole/electron physics?
I can't help you because I don't know nothing about transistor physics.
Ry122 said:
Jony, how would you put it into active mode when the current source is connected to the collector?
There are many ways to achieve it. For example we can use some negative feedback from collector to base. Or we can simply set Isource around Ib*β value.
 
  • #11
Wouldnt hfe*B just need to be higher than Ic and that will make in active mode?
 
  • #12
Ry122 said:
Wouldnt hfe*B just need to be higher than Ic and that will make in active mode?
You mean hFE*IB? That condition puts it in saturation.

To be in the active region, hFE*IB = IC
 
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  • #13
@Ry122... We have to first see the importance of biasing. The approach which is used in electronics engineering is mostly not hole-electron pair explanations. These hole-electron pair phenomena is also not accurate. You need to learn semiconductor physics and promise yourself that Scrodinger's equation best describes the atomic world and solve it to get Fermi levels(using Fermi-Dirac Statistics), conduction bands, valence bands and so on. Then, you need to study extrinsic p and n semiconductors. Then you need to see what happens when you join both( to form a diode)...Then, you have to extend the same to transistor.
The problem does not end with transistor alone. You need to know something like Eber-Bohr Transistor model, how to model it and so on. Using this model, you can construct for yourself various bjt biasing circuits and prove that the voltage and current values don't deviate much.
It may look daunting but with little differential equations, and little algebra, you can manipulate things to prove for yourself
 

1. What is biasing in BJTs?

Biasing in BJTs refers to the process of setting the DC operating point or quiescent point of a transistor to ensure proper amplification and switching operations. It involves applying a DC voltage or current to the transistor's base terminal to establish a suitable bias voltage and current for the transistor to function.

2. Why is biasing necessary for BJTs?

Biasing is necessary to ensure the transistor operates in the active region, where it can provide the desired amplification or switching function. Without proper biasing, the transistor may operate in the saturation or cutoff region, leading to distortion or no output at all.

3. What are the different types of biasing in BJTs?

The three most commonly used types of biasing in BJTs are fixed bias, emitter bias, and voltage divider bias. Fixed bias uses a resistor connected between the base and a fixed voltage source, while emitter bias connects a resistor between the emitter and a fixed voltage source. Voltage divider bias, on the other hand, uses a voltage divider circuit to supply bias voltage to the transistor's base.

4. How do you calculate the biasing components for BJTs?

The values of the biasing components for BJTs can be calculated using the transistor's DC operating conditions and the desired biasing scheme. For example, for fixed bias, the base resistor can be calculated using the formula RB = (VCC - VBE) / IB, where VCC is the supply voltage, VBE is the base-emitter voltage, and IB is the desired base current.

5. What are the common problems associated with biasing BJTs?

The common problems associated with biasing BJTs include thermal runaway, where the transistor's temperature increases, causing its current gain to decrease and potentially damaging the device. Other issues include bias instability, where small changes in temperature or transistor parameters can significantly affect the bias voltage, and bias drift, where the bias voltage slowly changes over time due to aging or environmental factors.

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