Anyway there are still questions that remain unanswered
For instance, what role does shallow donor impurities have to play in question number 2.
Any suggestions to the proposed solution above will be highly appreciated
For question number 2
unionized atoms are left at the acceptor level
Ef-Ev=0.26eV
Ea-Ev=0.16eV
Ea-Ef=0.16-0.26= -0.10eV
Using fermi-driac statistics f(E)=1/(1+e((E-Ef)/KT)))
for E=Ea,T=300 and substituting all the constants
f(E)=1/(1+e((Ea-Ef)/KT))), gives = 0.9794...
This is what I have came up with so far for question number 1
using the relation n(o) = ni x e((Ef-Ei))/KT)
with Ef-Ei=0.36 x 1.6 x 10^-19 , ni=1.5 x 10^10, T=300k , K=1.38 x 10^-23
we get n(o) = 1.654 x 10^16 per cm cube
However there are 10^16 B atoms to neutralize these charges...
Can any please help me in solving the following two questions
Q1
A Si sample is doped with 10^16 per cm cube boron atoms and a certain
number of shallow donors. The fermi level (Ef) is 0.36 eV above Ei
(intrinsic energy level) at 300K. What is the donor concentration Nd?
For Si at 300K...