Can surface tension affect the properties of silicon?

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SUMMARY

The discussion centers on determining the surface energy value of the silicon and SiO2 interface. Two primary methods are identified: performing ab initio calculations using software such as Castep, Siesta, or Abinit, and analyzing band bending at the Si/SiO2 interface through existing energy charts. Additionally, the influence of nitrogen incorporation on silicon's surface stress, relevant to transistor technology and electron mobility in MOSFETs, is highlighted. Resources such as the INTEL webpage on Si3N4 are recommended for further information.

PREREQUISITES
  • Understanding of ab initio calculations
  • Familiarity with Castep, Siesta, and Abinit software
  • Knowledge of band bending concepts in semiconductor physics
  • Basic principles of MOSFET technology and electron mobility
NEXT STEPS
  • Research ab initio calculations using Castep, Siesta, and Abinit
  • Explore band bending at semiconductor interfaces
  • Investigate the effects of nitrogen incorporation on silicon surface stress
  • Review the INTEL webpage for information on Si3N4 and its applications
USEFUL FOR

Researchers, semiconductor engineers, and students in materials science or electrical engineering focusing on silicon interfaces, surface energy, and transistor technology.

Mr. G
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Hi all,
I wonder whether anybody could help me finding the surface energy value of the interface between silicon and SiO2...
Thanks in advance !

Mr. G
 
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Mr. G said:
Hi all,
I wonder whether anybody could help me finding the surface energy value of the interface between silicon and SiO2...
Thanks in advance !
Mr. G

There are two ways. the most correct way is to execute ab initio calculations with software like Castep, Siesta, Abinit. These calculations will give you the required data

The second way is more general. Just look at the band bending at the Si/SiO2 interface. These energy charts are very well known and can be found anywhere on the net. Just do a little googling.

It all depends on what exactly you are looking for.

For example, i have an Italian friend at IMEC who is currently studying the influence on the surface stress of silicon when you incorporate Nitrogen. This system is used in transistor technology to boost up the electron mobility in the Si-substrate on a MOSFET.

Check out the INTEL webpage for more info in Si3N4 etc

marlon
 

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