BJT Transition Frequency for a High-Frequency Design

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SUMMARY

The discussion centers on the transition frequency (f_T) of BJTs, specifically the 2N2222A NPN transistor, in relation to high-frequency applications at 120-125 MHz. It is established that to achieve a current gain (hFE/β) of 10 at 125 MHz, a BJT with a transition frequency of approximately 1.25 GHz is required. Factors such as input capacitance, Miller capacitance, and the driving impedance significantly influence the effective gain and performance of the BJT in RF applications. The conversation emphasizes the importance of understanding these parameters when selecting a BJT for high-frequency designs.

PREREQUISITES
  • Understanding of BJT operation and characteristics
  • Knowledge of transition frequency (f_T) and its implications
  • Familiarity with RF design principles and gain calculations
  • Basic concepts of input and Miller capacitance in BJTs
NEXT STEPS
  • Research the specifications and performance of high-frequency BJTs, particularly those with f_T around 1 GHz
  • Study the impact of input and Miller capacitance on BJT performance in RF applications
  • Learn about the differences between voltage gain and power gain in RF circuits
  • Explore BJT amplifier design techniques for frequencies above 125 MHz
USEFUL FOR

Electrical engineers, RF designers, and anyone involved in high-frequency circuit design will benefit from this discussion, particularly those working with BJTs in RF applications.

satchmo05
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Hey all,

If I understand correctly, transition frequency is synonymous with the unity-gain bandwidth frequency. With that said, if you divide the gain at the operating frequency by the transition frequency, you should get the operating frequency. Please correct my logic if I am incorrect.

The reason why I ask is because I am designing a system that uses HF signals (120 & 125 MHz), and I am in need of a BJT that can handle these sorts of HF signals. At this frequency, I need a current gain, hFE/β somewhere between 5-40 (not exactly sure incoming base current at this time). I'm assuming the gain would need to be somewhere around 5-10.

Due to its availability and cost ($0.00), I have researched the 2N2222A NPN BJT. It has a transition frequency of 300 MHz. With my logic above, if I were to operate at 125 MHz, I would receive a current gain close to 2.5, well under what I need for my design. Is my logic correct here? Do I need to look for a BJT with a transition frequency closer to 1 GHz to obtain the required current gain I need?

Thank you for your assistance,

- Satchmo05

P.S. I apologize for posting this twice, I realized it would be better for me to post this in the EE section, rather than General Engineering Design.
 
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I don't have the sure answer, I just join in the discussion.

Rough estimate, if you want gain of 10 at 125MHz, you want f_T\;=1.25GHz which is 10 time 125MHz. I have designed BJT amplifier circuits with comparable gain faster than 125MHz using 1GHz BJTs

But in reality, I don't think it is nothing that simple. I think the f_T\; is defined in certain input driving condition. There are other factors in the input driving characteristics that are very important. Don't quote me on this, but... It has a lot to do with input capacitance and Miller capacitance: C_{be} \;\hbox {and } C_{bc}\; respectively. If your drive is 50Ω, you form an RC and there is a pole that relates to f_T\;. But if your drive is very low impedance, it would be faster.

Another factor is the transit time or something in the semi conductor which I am not familiar with, also play a role in the speed of the BJT.

I know the s-parameter of RF BJT take into consideration of the input capacitance and Miller capacitance, that the reason you have S_{11} \;\hbox { and } S_{12}. That's the reason you see from Smith Chart the input impedance actually become reactive and goes quite low.

When you talk about gain, I assume is voltage gain. But if frequency is very high, the input impedance become quite low and driving become a problem. In RF, we mostly talk about power gain rather than voltage gain as it take power to drive the BJT to get output. In another word even if you have a voltage gain equal 10, but if your input impedance become so low that it takes a lot of power to even drive the input.

Someone more familiar with BJT might be able to answer this.
 
Last edited:
I surf around a little. f_T\; is defined as frequency where \beta\; falls to unity. It is the frequency current gain drops to unity.

In another word, R_{in}= \beta R_E≈R_E\; The input impedance beome low and the transistor kind of disappeared!

Here is a link:

http://cktse.eie.polyu.edu.hk/eie304/FrequencyResponse.pdf
 

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