Calculation of Conduction Electron Population for Semi Conductor

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SUMMARY

The discussion focuses on the calculation of conduction electron population in semiconductors, specifically using the expression for population density derived from solid state physics principles. Key points include the approximation of the Fermi level in intrinsic semiconductors, which is often centered in the band gap, and the necessity for the exponential factor in the population density expression to be dimensionless. The participants also highlight the importance of understanding effective masses of holes and electrons for accurate calculations. For deeper insights, consulting solid state physics textbooks is recommended.

PREREQUISITES
  • Understanding of semiconductor physics
  • Familiarity with Fermi-Dirac statistics
  • Knowledge of Boltzmann distribution
  • Basic calculus, specifically integration techniques
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  • Study the derivation of the conduction electron population density in semiconductors
  • Learn about the effective mass of charge carriers in semiconductors
  • Explore the implications of doping on Fermi level positioning
  • Review solid state physics textbooks for detailed explanations of related concepts
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opuktun
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Hi everyone,

From this website (link: http://hyperphysics.phy-astr.gsu.edu/HBASE/solids/fermi3.html#c1 ), we get the following expression:

Population Density of Conduction Electron = \int ^{\infty}_{Egap}N(E)d(E) = \frac{2^{5/2}(m \pi k T)^{3/2} exp (-E gap/2kT)}{h^3}

My questions are based on the derivation given by the website as follow:-1. EF = Egap / 2
Is this a defined property of semiconductors?2. Is there an error in the following expression?
N(E)d(E) = \frac{8\sqrt{2} \pi m^{3/2}}{h^3} \sqrt{E-Egap}\ e^{-(E-Egap/2)}
I mean originally it has kT in the power of exponential term. Is it mistakenly dropped?3. Is "integration by parts" applied on the following expression?
N(E)d(E) = \frac{8\sqrt{2} \pi m^{3/2}}{h^3} \sqrt{E-Egap}\ e^{-(E-Egap/2)}
Somehow, I can't solve the integration.Thanks.
 
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Formula for density of electrons in conduction band is a good approximation for a classical gas of carriers in intrinsic semiconductors. Only if electron gas is classical you can approximate Fermi - Dirac statistic with Boltzmann one and only if the semiconductor is intrinsic Fermi's level is in the middle of energy gap. In a more general
way Fermi's level depends on doping level, temperature and effective density of states.
Regarding point 2 the exponential factor must be dimensionless.

For more details it's better if you'll see on solid state physics's books. You' ll find clearer derivations than the one you found on the link you posted.

Matteo.
 
Just to address your first question: in intrinsic semiconductors (no impurities present), the Fermi level is often approximated as lying at the center of the band gap. It doesn't lie exactly at the center at non-zero temperatures, however, because the effective masses of holes and electrons are different. A more precise equation is

E_F=E_V+\frac{E_g}{2}+\frac{3}{4}k_B T \ln\frac{m^\star_h}{m^\star_e}
 
Mapes said:
E_F=E_V+\frac{E_g}{2}+\frac{3}{4}k_B T \ln\frac{m^\star_h}{m^\star_e}

Thanks Mapes for the explanation, I finally understood the r/s.

matteo83 said:
Regarding point 2 the exponential factor must be dimensionless.

For more details it's better if you'll see on solid state physics's books. You' ll find clearer derivations than the one you found on the link you posted.

Thanks matteo. I'm gng to hit those books in my lib. :)
 

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