Can surface tension affect the properties of silicon?

Mr. G
Messages
2
Reaction score
0
Hi all,
I wonder whether anybody could help me finding the surface energy value of the interface between silicon and SiO2...
Thanks in advance !

Mr. G
 
Physics news on Phys.org
Mr. G said:
Hi all,
I wonder whether anybody could help me finding the surface energy value of the interface between silicon and SiO2...
Thanks in advance !
Mr. G

There are two ways. the most correct way is to execute ab initio calculations with software like Castep, Siesta, Abinit. These calculations will give you the required data

The second way is more general. Just look at the band bending at the Si/SiO2 interface. These energy charts are very well known and can be found anywhere on the net. Just do a little googling.

It all depends on what exactly you are looking for.

For example, i have an Italian friend at IMEC who is currently studying the influence on the surface stress of silicon when you incorporate Nitrogen. This system is used in transistor technology to boost up the electron mobility in the Si-substrate on a MOSFET.

Check out the INTEL webpage for more info in Si3N4 etc

marlon
 
Hi. I have got question as in title. How can idea of instantaneous dipole moment for atoms like, for example hydrogen be consistent with idea of orbitals? At my level of knowledge London dispersion forces are derived taking into account Bohr model of atom. But we know today that this model is not correct. If it would be correct I understand that at each time electron is at some point at radius at some angle and there is dipole moment at this time from nucleus to electron at orbit. But how...
Back
Top