Can Vth of MOS be lowered for lower input voltages?

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The discussion centers on lowering the threshold voltage (Vth) of MOSFETs for rectifier designs targeting input voltages around 100mV. Key mechanisms for adjusting Vth include using Boron threshold adjustment implants for NMOS and corresponding techniques for PMOS, which are standard in modern IC processes. However, the fixed boron dose limits the ability to modify Vth unless specified during fabrication. The use of a Low-Noise Amplifier (LNA) is suggested as a potential solution, contingent on the availability of an external power supply.

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shaikss
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Hi,

I want to design a rectifier for lower input voltages in the order of 100mV.
So, in order to achieve the same, when I use MOS, I want to lower the Vth.
What are the different mechanisms that are implemented in order to lower/cancel the Vth?

Thanks!
 
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The question is whether he has external power supply to power up anything. If so, that is going to be easy. If not, then it's going to be very hard.
 
Usually Vth is adjusted by Boron threshold adjustment implant for NMOS and vice-versa for PMOS. This thing is included in standard process steps in today's IC process. However, the boron dose is fixed and this generates only one kind of MOS with fixed Vth.

Unless you explicitly tell fab labs to use different dosage, you cannot change Vth.
 

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