Depletion zone and current in forward-biased PN junction

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SUMMARY

The discussion centers on the behavior of a forward-biased PN junction, specifically how forward-biasing reduces the depletion width by pushing holes in the P-type material and electrons in the N-type material toward the junction. This reduction occurs because the injected charge carriers recombine with opposite carriers in the depletion zone. The current in a forward-biased PN junction consists of both diffusion current, resulting from the concentration imbalance of charge carriers, and drift current, which is influenced by the external electric field.

PREREQUISITES
  • Understanding of PN junction theory
  • Knowledge of charge carrier dynamics
  • Familiarity with concepts of drift and diffusion currents
  • Basic principles of semiconductor physics
NEXT STEPS
  • Study the effects of forward bias on depletion region width in PN junctions
  • Learn about the mathematical modeling of drift and diffusion currents in semiconductors
  • Explore the role of recombination in semiconductor devices
  • Investigate the characteristics of current-voltage (I-V) curves in forward-biased diodes
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Electrical engineers, semiconductor physicists, and students studying electronics who seek to deepen their understanding of PN junction behavior and current flow in forward-biased conditions.

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Hello.

I've learned that in PN junction, forward-biasing pushes holes in P-type and electrons in N-type forward junctions so depletion width is reduced. Is it due to that in N-type (P-type), pushed electrons (holes) are recombined with holes (electrons) in depletion zone?

And what is true identity of current in forward-bias? In this biasing, I guess there are two kinds of current; charge carrier diffusion due to carrier concentration imbalance at the junction (diffusion current) and drifted carrier pushed by external field in biasing (drift current). Is forward-biasing current consisted of both types of current or one of them?
 
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Do not post the same question twice!

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