Electric polarization involves the defect centers in the dielectric

Silicon
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I konw that the defect centers in a dielectric contribute to the electric polarization and thus affect the permittivity.If there is any microscopic theory can derivate the relationship between the defect centers and the permittivity?
 
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There certainly is. I'm not sure I can find good references on short notice.

Very often - for instance in perovskite structures - an impurity site can be very polar (mostly from electron capture). This strong, oriented dipole "pins" the polarization of the surrounding lattice (in the vicinity) by dipole-dipole interactions. This effect has been studied extensively, in terms of the electrostatic, thermodynamic (the free-energy gains an inhomogeneous strain-energy-like term) and transport (some defects, like oxygen vacancies, can lead to high ionic conductivity) properties of materials.
 
Silicon said:
I konw that the defect centers in a dielectric contribute to the electric polarization and thus affect the permittivity.If there is any microscopic theory can derivate the relationship between the defect centers and the permittivity?

Great question. This is an issue of serious research right now. I will refer you to the home page of Prof Alex Shluger of UCL. He is working in this field and he collaborates with my phd promotor who is working in ESR-caracterization (like Pb-centers,etc).

Here it is http://www.cmmp.ucl.ac.uk/~ayg/group/
Click on "research"

regards
marlon
 
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Hi. I have got question as in title. How can idea of instantaneous dipole moment for atoms like, for example hydrogen be consistent with idea of orbitals? At my level of knowledge London dispersion forces are derived taking into account Bohr model of atom. But we know today that this model is not correct. If it would be correct I understand that at each time electron is at some point at radius at some angle and there is dipole moment at this time from nucleus to electron at orbit. But how...
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