Energy band gap of semiconductors

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Discussion Overview

The discussion revolves around the energy band gap of semiconductors, specifically germanium, and its implications for intrinsic conductivity and temperature requirements for charge carrier excitation. Participants explore the relationship between energy, temperature, and conductivity in semiconductors.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • One participant states that the band gap of germanium is around 0.67 eV, suggesting that this energy is needed for valence electrons to jump to the conduction band.
  • Another participant agrees that intrinsic semiconductors have very few charge carriers until high temperatures are reached.
  • A participant expresses surprise at the calculated temperature of 9000 K required for electricity to flow, questioning if this is accurate.
  • There is a query about whether the flow of intrinsic charge carriers is the same as breakdown voltage charge carriers in semiconductors.
  • One participant explains that the average thermal energy per degree of freedom is represented by 1/2 kT, and mentions that phonons can excite electrons into the conduction band at lower temperatures than estimated.
  • Another participant discusses the resistivity of germanium at room temperature and calculates its conductivity, questioning how to interpret this value.
  • A later reply indicates that resistivity alone cannot determine carrier concentration, as it also depends on factors like relaxation time and mobility, and compares the carrier concentration in germanium to that in copper.
  • One participant asks about the amount of carriers required for reasonable current flow.

Areas of Agreement / Disagreement

Participants generally agree on the relationship between band gap energy and temperature for charge carrier excitation, but there are differing views on the implications of resistivity and conductivity, as well as the specific conditions under which intrinsic conductivity occurs. The discussion remains unresolved regarding the precise temperature and carrier concentration needed for effective current flow.

Contextual Notes

Limitations include the dependence of conductivity on factors such as relaxation time and mobility, which are not fully explored in the discussion. The calculations and estimates presented are based on assumptions that may not account for all variables involved.

Who May Find This Useful

This discussion may be useful for students and professionals interested in semiconductor physics, materials science, and electrical engineering, particularly those exploring the properties and behaviors of intrinsic semiconductors.

quietrain
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ok let's say i have a semiconductor like germanium with band gap of around 0.67eV at rtp.

so this means that i need around 0.67 x 10-19 J of energy to cause valence electrons to jump to conduction band right?

do i use the formula E = 1/2 kT to relate this energy to temperature?

so i calculated the temperature required which is 9000 K ! is this right? generally what temp does intrinsic conductivity occur for germanium?

thanks!
 
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Yes, that's about right. Intrinsic semiconductors have very few charge carriers until rather high temperatures.
 
so i need roughly 9000 K temp for electricity to flow? wow.

this flow of intrinsic charge carriers is the same as breakdown voltage charge carriers in the semiconductor right?
 
quietrain said:
so i need roughly 9000 K temp for electricity to flow? wow.

this flow of intrinsic charge carriers is the same as breakdown voltage charge carriers in the semiconductor right?
Remember than 1/2kT is the average thermal energy (per degree of freedom). There are particles (phonons) with energies larger than average and they may excite electrons into the conduction band. So you'll have some conduction at temperatures well below the estimate. You can estimate how many if you find the conductivity of intrinsic germanium (at room temperature, for example).
 
nasu said:
Remember than 1/2kT is the average thermal energy (per degree of freedom). There are particles (phonons) with energies larger than average and they may excite electrons into the conduction band. So you'll have some conduction at temperatures well below the estimate. You can estimate how many if you find the conductivity of intrinsic germanium (at room temperature, for example).

wiki says its resistivity p is (20 °C) 1 Ω·m,

so conductivity = 1/p = 1/1 = 1 Ω-1·m-1 ?

so how should i intepret this conductivity value?
 
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You cannot calculate the number just from resistivity alone because this depends on other factors like relaxation time or (related to it) mobility.
But we can compare for example copper with a resitivity of the order of 10^(-8) and germanium with 1 (both in Ohm-m).
As the resistivity is proportional with carrier concentration, we can estimate that the concentration in Ge will be maybe smaller than in copper by a factor of 10^8 or even more.
However the electron concentration in copper is 10^22 per cubic cm.
So even a decrease by a factor of 10^10 still leaves some carriers in.
 
oh isee thanks

just a last question, about how much carriers is required so that current flows reasonably?
 

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