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Energy deposited by high energy electrons in matter

  1. Mar 16, 2010 #1
    Hello all,
    i am trying to calculate the energy deposited by high energy electrons travelling through Silicon. I am dealing with energies in the range of 10^6 - 10^12 eV. I have read that radiative losses will dominate at higher energies and the critical energy where ionization loss = radiative loss is ~ 40 MeV for silicon. Can someone please direct me to the equations i can use to calculate both ionization and radiative losses for high energy electrons? Thanks.

    Rich.
     
  2. jcsd
  3. Mar 17, 2010 #2
  4. Mar 21, 2010 #3
    Thanks Bob,
    I have read that dE/dX from radiative energy losses for electrons can be approximated as E/Xo, where E is the energy of the electron and Xo is the radiation length in the material. Is this approximation valid at very high energies? i.e. 10^7 MeV - 10^10 MeV.

    Thanks.
     
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