MOSFET Region/Biasing Confusion

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Discussion Overview

The discussion revolves around the confusion regarding the biasing and operational regions of MOSFETs, specifically focusing on the conditions for Cut-Off, Linear, and Saturation regions. Participants explore the implications of biasing on the current (Id) and the relationship between the gate-source voltage (Vgs) and gate-drain voltage (Vgd).

Discussion Character

  • Homework-related
  • Exploratory
  • Technical explanation

Main Points Raised

  • One participant outlines the conditions for a MOSFET to be in saturation, noting the dependence of Vgd on Id and expressing confusion about how Id is determined by the region while also being a factor in identifying the region.
  • Another participant suggests a method for approaching biasing problems, recommending to assume a region of operation, calculate voltages, and check for consistency with the initial assumption, highlighting the role of resistor values in determining the operational region.
  • A further comment draws a parallel between MOSFET analysis and diode analysis, suggesting that initial assumptions about the state of the device can guide the analysis until proven otherwise.

Areas of Agreement / Disagreement

Participants generally agree on the approach to handling biasing problems by making initial assumptions, but there is no consensus on the confusion regarding the dependence of Id on the operational region and the implications for determining that region.

Contextual Notes

The discussion highlights the complexity of determining operational regions in MOSFETs, particularly the interplay between Id, Vgs, and Vgd, and the potential for multiple interpretations based on circuit conditions.

CoolDude420
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Homework Statement


I just encountered some MOSFET problems that made me rethink what biasing and the regions really mean.
Okay, so here is what I know:

Consider the following circuit
9104f39657.png


The regions of the MOSFET are Cut-Off, Linear and Saturation. Considering Saturation, the conditions for the mosfet to be in saturation are,

$$Vgs>Vt$$ and $$Vgd<Vt$$

Now. In textbooks, we say that we can keep in the MOSFET in saturation by applying a bias gate voltage Vg. I undersntad that we can set Vgs = Vg >Vt and we obey the first condition. But for the second condition,

$$ Vgd < Vt $$
where $$Vgd = Vg - Vd = Vg - RdId$$

Now, Vgd is dependent on Id. Here's the confusion. We have been told that depending on what region the MOSFET is in a different Id equation applies. So how come Id is required to find what region it is in but if we know the region we have a particular Id equation?

Homework Equations

The Attempt at a Solution

 

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Biasing problems are sometimes "chicken-and-egg". The best way to proceed is to assume a region of operation based on your best guess, calculate the relevant voltages, and then see if they are consistent with your initial assumption. With a resistively loaded MOSFET, whether it is in saturation depends on if the IR drop across the resistor is small enough so that Vds > (VGS-Vt). For some values of R it is, for others it isn't. If R is too big, the device goes into triode. This kind of issue comes up all the time in practical circuits.
 
analogdesign said:
Biasing problems are sometimes "chicken-and-egg". The best way to proceed is to assume a region of operation based on your best guess, calculate the relevant voltages, and then see if they are consistent with your initial assumption. With a resistively loaded MOSFET, whether it is in saturation depends on if the IR drop across the resistor is small enough so that Vds > (VGS-Vt). For some values of R it is, for others it isn't. If R is too big, the device goes into triode. This kind of issue comes up all the time in practical circuits.

Oh alright. So it's sort of like when we analyse diodes, we assume if its off or on and go with that and then unless our assumption is proven otherwise, we keep it?
 
Yep, that's right!
 

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