How Do You Ensure Only Fe3+ Ions Are Implanted in a Target?

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The discussion focuses on the implantation of Fe3+ ions into a target while avoiding the contamination of Fe2+ and Fe1+ ions. Key strategies include utilizing a final energy magnet positioned at an angle to eliminate energy contamination from the ion beam. The analyzer magnet plays a crucial role in filtering out neutral contaminants, while the use of a focused energy magnet (FEM) is essential for further purification. The challenges of plasma implantation with high voltage (HV) are also highlighted, particularly regarding the control of energy levels and diffusion doping.

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Panthera Leo
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This question might sound very simple, but I couldn't find a relevant answer by googling;

Assume Fe3+ is to be implanted in some target, how to get the 3+ ions to be implanted and not the 2+ or 1+ ?

Thanks for your contributions.
 
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Panthera Leo said:
This question might sound very simple, but I couldn't find a relevant answer by googling;

Assume Fe3+ is to be implanted in some target, how to get the 3+ ions to be implanted and not the 2+ or 1+ ?

Thanks for your contributions.

First, I cannot imagine you implanting iron because it contaminates anything in an implanter that it touches (and it's ferrous).

However, you would need a final energy magnet at an angle that strips any energy contamination from the beam. Your analyzer magnet would do most of that, but you would pick up neutral contaminants (your bigger problem) and those along with the energy contaminants (+ and ++) would be filtered in the FEM.

Hope this helps.

If you are talking about plasma implantation with HV to a target, you cannot control the energy level that well, which is why diffusion style doping is ok for coating substrates, but not for controlling depth of implant or for voltage threshold adjust type applications.
 

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