SUMMARY
Lithography has significantly evolved over the past 20 years, particularly in relation to Moore's laws, which predict the doubling of transistors on integrated circuits. Key advancements include the reduction of light wavelength to improve resolution, with current techniques utilizing 193 nm light and the emerging extreme ultraviolet (EUV) lithography at 13.5 nm. Immersion lithography has also been introduced, enhancing numerical aperture (NA) by submerging the wafer in water during exposure. These developments necessitate innovations in resist chemistry to accommodate the changes in exposure energy.
PREREQUISITES
- Understanding of lithography techniques and their impact on semiconductor manufacturing
- Familiarity with Moore's laws and their implications for technology advancement
- Knowledge of critical dimension (CD) calculations and the factors affecting it
- Awareness of resist chemistry and its role in lithography processes
NEXT STEPS
- Research the principles of immersion lithography and its advantages over traditional methods
- Explore the challenges and solutions associated with extreme ultraviolet (EUV) lithography
- Study the impact of wavelength reduction on resist materials and their performance
- Investigate the future trends in lithography and their potential effects on semiconductor technology
USEFUL FOR
Engineers, researchers, and professionals in semiconductor manufacturing, particularly those focused on lithography techniques and advancements related to Moore's laws.