How has lithography evolved over the past 20 years in relation to Moore's laws?

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Lithography has significantly evolved over the past 20 years, particularly in relation to Moore's laws, by improving resolution through various techniques. A key advancement has been the reduction of light wavelength, which enhances exposure energy but necessitates changes in resist chemistry. The introduction of immersion lithography has further improved resolution by using water to decrease numerical aperture during exposure. The next generation, extreme ultraviolet (EUV) lithography, operates at a wavelength of 13.5 nm, presenting new challenges that require innovative solutions. Overall, these advancements reflect ongoing efforts to meet the demands of increasing transistor density in semiconductor manufacturing.
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researching "lithography"

I've been researching "lithography" and have been looking for some info on the evolution of various techniques that have improved this process over the last 20 years. Anybody have some knowledge on this? (In relation to Moore's laws).
 
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Given CD= k*(λ/NA), where CD is critical dimension (overall resolution essentially), λ= wavelength of light and NA is numerical aperture,

Well, one aspect of litho that has improved resolution has been simply to increase the energy (ie decrease wavelength) of light during exposure. This requires resist chemists to change their product to suit different energies.

Relatively recently, immersion litho started. This physically puts the wafer in water to decrease the NA during exposure.

EUV is the proposed next gen of light litho (13.5 nm vs current 193 nm light). Unfortunately, it is not so simple as just decreasing the wavelength of light. This has introduced a multitude of other issues that are being worked on in order to get the desired resolutions.

Are there any specific questions?
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