IGBT(Difference between n and n(+))

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Cross-section diagram of an IGBT device with labeled layers: SiO2 and gate metal on top, p and n+ regions in the upper body, n- drift layer, n+ layer, and a bottom p+ layer.

Could someone please illustrate the contrast among n, n+ and n-.
 
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  • Cross-section diagram of an IGBT device showing labelled layers: SiO2 at top left, gate and emitter metal contacts, p and n+ regions, n- drift layer, and p+ substrate at the bottom.
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Density of n is higher in n+ region and lower in n- while medium in n region.
 
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