Hi, I was designing a High Power High frequency Induction Heater inverter. I've choose H-bridge configuration for the inverter and IR2110 gate drivers to drive the bridge. As the IR2110 is a half-bridge driver i'll use two of them to drive the both sides. I've done a rough circuit(just drawing). As i dont know much about power electronics i wonder if there is any mistake. i am looking for advice, recommendation, and any kind of error that should be fixed in my circuit. Also i've some questions: 1) what is the use of C3 n how i'll calculate the value? 2) Exactly which back EMF protection Diode should i use as D' ? 3) Do i need to use an opto-isolator for high side nMosfets? The intended frequency is 150KHz and the Mosfet's are N-type.