Do I Need Freewheel Diodes for My H Bridge Mosfet Inverter Circuit?

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Discussion Overview

The discussion revolves around the design of an H-bridge MOSFET inverter circuit, specifically addressing the necessity of freewheel diodes and other circuit considerations. Participants are sharing circuit diagrams, seeking corrections, and discussing the implications of component choices in the context of driving inductive loads.

Discussion Character

  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • One participant requests help with their H-bridge MOSFET inverter circuit design, mentioning the use of the HCPL3120 gate driver.
  • Another participant suggests posting a diagram for better assistance.
  • Concerns are raised about the use of 10k gate resistors, with a recommendation for 10 ohm resistors instead.
  • It is noted that a boosted supply voltage is necessary for each high-side driver, requiring additional components like capacitors and diodes.
  • Questions are posed regarding the common ground and voltage levels in the circuit, indicating a need for clarification before revisions can be made.
  • One participant highlights the importance of preventing both high and low sides from being turned on simultaneously, suggesting that better half-bridge drivers may exist to address this issue.
  • Another participant emphasizes the need for flyback or freewheel diodes when driving inductive loads, indicating that these diodes are critical for protecting the MOSFETs.
  • There is a discussion about the intrinsic body diode of MOSFETs, which may suffice for freewheeling in many situations, but some participants suggest using Schottky diodes in parallel to reduce losses in demanding applications.
  • Active rectification is mentioned as a method to improve performance by turning on the FET regardless of current direction.

Areas of Agreement / Disagreement

Participants express differing views on the necessity and implementation of freewheel diodes in the circuit. While some argue that MOSFETs' intrinsic body diodes may be adequate, others advocate for the inclusion of additional diodes for enhanced performance, particularly in inductive applications. The discussion remains unresolved regarding the optimal approach to diode usage in this context.

Contextual Notes

Limitations include the need for clarification on circuit connections and voltage levels, as well as the potential for varying requirements based on specific load conditions and component choices.

khalil977
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TL;DR
hello i am designing H bridbe mosfet inverter with gate driver HCPL3120 i need help in circuit please help circuit diagram with all four drivers connected i am very confused about that please help me
Thanks
i am designing H bridbe mosfet inverter with gate driver HCPL3120 i need help in circuit
 
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Post a diagram of what you’ve got so far.
 
243674
 
Plz correct my circuit diagram thanks
 
khalil977 said:
Plz correct my circuit diagram thanks
What is wrong with the way the circuit works? Have you scoped it?
 
Welcome to PF.

The driver is capable of 2 amps, but you show 10k gate resistors.
I would expect 10 ohms.

You may need to connect the source of each mosfet to the pin 5 common output of the floating driver chip.

You must provide a boosted supply voltage for each high-side driver. That will require a capacitor and diode on each high-side driver.

Additional information required before revision of circuit diagram.
1. Is pin 3 common ground on the J2, J3, J4 & J5 ?
2. What is the J7 positive voltage?
3. What is the J8 negative voltage?
 
The IRF740 suggests you will be using high voltages, greater than the opto-isolator can handle, so you will need a floating supply for the low side switch, with a diode and capacitor for the high-side switch. That is necessary to turn on, and hold the hi-side switch on because the gate voltage must be higher than the positive supply rail.

You must find some way of preventing both Hi and Lo sides being turned on at the same time. I think there are better half-bridge drivers available that will prevent both switches conducting at the same time.

If you are driving an inductive or motor load you will need flyback or freewheel diodes across all mosfets.

Here is an improved half-bridge circuit using the HCLP-3020 and IRF740.
Use two half-bridge circuits to make a full H-bridge.

243950
 
Baluncore said:
You must find some way of preventing both Hi and Lo sides being turned on at the same time. I think there are better half-bridge drivers available that will prevent both switches conducting at the same time.

Definitely. Belt and Suspenders definitely. GPS IIA drove their solar arrays with an H-bridge. The 'legs' were controlled by a pair of light-sensing diodes arranged with a 'null' when aimed at the sun. Reactive components were added to the GPS II design as part of a hardening exercise. Reactive components + slip-ring (intermittent) connections = high-rate spikes. There are no service calls to 12,500 miles.
 
Baluncore said:
If you are driving an inductive or motor load you will need flyback or freewheel diodes across all mosfets.

Adding freewheel diodes is only something you need to do with certain devices, BJT for sure, IGBT also natively needs it, although some are co packaged with diodes, if using bare die then IGBT needs a diode.

Mosfets have the intrinsic body diode that serves the purpose of freewheeling for all but the most demanding situations, where some people will put a schottky in parrallel to reduce conducted losses and reduce reverse recovery, although most of the gains can be had by active rectification, ie turning the FET on if its conducting regardless of the direction of current flow.
 

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