Hi manyoolo,
The short answer is: I would advise you to do literature research and run tests in your system to get the an accurate answer. Here is what I think:
The experiments I've done back in 2009 led me to use MFC's and no active form of partial pressure control to minimize cost. I believe you can use an RGA (along with auxiliary required tool control systems) to obtain live partial-pressure data and actively control the oxygen partial pressure, and that is something that has significance if you are working with thin films; the micro structure is dependent on the surrounding gases.
I wanted to improve a thin film sputtering process with RGA active controls and do cross-sectional TEM analysis, but instead I simply ran experiments with a cheap MFC and evaluated the thin film sheet resistance, which was the main criterion for my application. Depending on what you are doing, you may be able to get away with coarse controls.
I hope this helps.
Final note: partial pressure cannot be directly controlled by MFC; the pressure will vary in your chamber.