MOSFET Bias Circuit and Equations

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SUMMARY

The discussion focuses on designing a stable amplifier using MESFETs, highlighting the challenges in determining DC bias due to insufficient data in datasheets. Users noted that while datasheets provide IDSS and VP parameters, they lack threshold voltage and K coefficient information necessary for accurate calculations. The conversation emphasizes the need for empirical measurements to derive Vp and K, using specific equations to estimate Vgs(th) and K. However, participants caution that these equations may not reflect real-world performance due to process variations in MOSFETs.

PREREQUISITES
  • Understanding of MESFET amplifier design principles
  • Familiarity with scattering parameters in amplifier circuits
  • Knowledge of MOSFET and JFET characteristics
  • Ability to perform empirical measurements for device characterization
NEXT STEPS
  • Research empirical measurement techniques for determining Vp and K coefficients in MESFETs
  • Learn about the differences between MOSFET and JFET equations and their applications
  • Explore the impact of process variations on MOSFET performance
  • Study advanced amplifier design techniques using MESFETs
USEFUL FOR

Electronics engineers, amplifier designers, and students interested in MESFET technology and its practical applications in circuit design.

baby_1
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Hello
I'm starting to design my amplifier with Mesfet.I calculated my stable amplifier with scattering parameters,however I don't know how do dc bias because I don't have any dc equations for Mesfet and and I can't extract dc information from datasheet (because datasheets only define IDSS (without threshold voltage such as FETs equation) and Vp (without define K coefficient such as Mosfet's equation).
 
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You can always measure your MOSFET and then you will know Vp and K coefficient.

https://www.physicsforums.com/threa...vds-for-mosfet-amplifier.660440/#post-4206467

Or simple take two measurements Id1 for Vgs1 and Id2 for Vgs2 .
And use this equation to solve for Vgs(th) = Vp = Vt

\Large Vt =\frac{V_{GS1} \sqrt{ \frac{I_{D2}}{I_{D1}}} - V_{GS2} } { (\sqrt{ \frac{I_{D2}}{I_{D1}}} - 1) }

And K = Id1/(Vgs1 - Vgs(th))^ 2

But this equations are not very useful in real world because MOSFET show great process spreader. Also real world MOSFET characteristic is far from theoretical quadratic equation.
 
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Thanks dear Jony130
as you know In Mesfets' datasheet we have only IDSS and VP parameters.does we have any equation for Mesfets? because it doesn't clear when we should use Mosfet equation or JFET equations for MESFET.
and does them accurate for Mesfet?
 

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