Ok to use MOSFET body diode as flyback protection?

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Discussion Overview

The discussion revolves around the use of the internal body diode of MOSFETs, specifically the IRFP3206, as a flyback protection mechanism in a motor controller design. Participants explore the implications of using this internal diode for handling inductive load switching, considering its characteristics and performance compared to external diodes.

Discussion Character

  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions the wisdom of using the internal body diode as a flyback diode, noting its intended purpose for protecting the FET junctions rather than for specific applications like flyback protection.
  • Another participant suggests that using the internal diode may lead to power loss due to its forward voltage of 1.3V, compared to an external Schottky diode, which could be more efficient.
  • Concerns are raised about the reverse recovery time of the internal diode, which may not be as fast as that of an external diode, potentially affecting performance.
  • A later reply emphasizes that a diode across the FET may not be effective unless it is a Zener diode, and highlights the need for a fast diode connected across the load to manage the positive-going spike when switching an inductive load.
  • It is mentioned that the internal diode is typically represented as a Zener, but it may break down at high voltages, leading to increased power dissipation and heating of the FET.

Areas of Agreement / Disagreement

Participants express differing views on the appropriateness of using the internal body diode for flyback protection, with some advocating for external diodes due to efficiency and performance concerns. The discussion remains unresolved regarding the best practice for this application.

Contextual Notes

Participants note limitations related to the specific characteristics of the internal diode, such as forward voltage and reverse recovery time, which may affect its suitability for flyback protection. There is also a mention of potential power dissipation issues when using the internal diode at high voltages.

TheAnalogKid
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Hello,

I am designing a motor controller, and I was curious about the MOSFETs I'm using that have an internal body diode zener for Vds protection that is common in a lot of datasheets.

I am switching the coils of the inductor with these MOSFETs, and I would like to know if its unwise to assume to use the internal zener diode of the MOSFET as my flyback diode when I am switching the inductor.

The part I'm using is IRFP3206 and I see the max pulsed current is 840 Amps for the FET's diode, and I can do the calculations to approximate the flyback current, so I think it is ok to use.

But, I just am cautious to use the internal diode for a specific function, when it seems like it is put in more to protect the FET junctions as a general purpose protection. Is this done in practice?
 
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I'm not sure if it's normal practice or not (I'd guess not), but with a forward voltage of 1.3V you're wasting power compared to an external Schottky for instance. Also, the reverse recovery time of the internal diode is typically not as fast as it will be with an external diode. Hard to tell if these are issues with the limited information you provided. Good luck.
 
gnurf said:
I'm not sure if it's normal practice or not (I'd guess not), but with a forward voltage of 1.3V you're wasting power compared to an external Schottky for instance. Also, the reverse recovery time of the internal diode is typically not as fast as it will be with an external diode. Hard to tell if these are issues with the limited information you provided. Good luck.

Thank you very much for the response. I didn't take these factors into consideration, and they seem to be good arguments for using an external diode.
 
When you switch an inductive load with a FET or transistor, the main spike is positive going, so a diode across the FET isn't going to help unless it is a Zener diode.

The diode needs to be a fast one and across the load with the anode connected to the drain of the FET.

The diode in Mosfets is usually shown as a Zener, but this would break down at some fairly high voltage (maybe 50 volts or so), so the power dissipated would be quite high and it would add to the heating of the FET.
 

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