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Proving direct band gap property of a semiconductor

  1. Dec 7, 2015 #1
    How can I prove direct band gap property of a Transition Metal Dichalcogenide electrically and optically through experimentation? I can use PL measurements to prove this for optical band gap. Is there any other equipment or technique to prove this? I can not use ARPES because channel length is around 5 um. I think ARPES requires larger films. I am using scotch tape method for exfoliation. Any help in this regard is highly appreciated. Thank you.
  2. jcsd
  3. Dec 13, 2015 #2
    Thanks for the post! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post?
  4. Dec 13, 2015 #3


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    Another way is Band edge absorption spectroscopy. Absorption curve is much sharper for direct band semiconductors.
    See this:

    https://www.researchgate.net/post/How_can_you_know_the_material_is_of_direct_band_gap_or_indirect_bandgap [Broken]
    Last edited by a moderator: May 7, 2017
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