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How can I prove direct band gap property of a Transition Metal Dichalcogenide electrically and optically through experimentation? I can use PL measurements to prove this for optical band gap. Is there any other equipment or technique to prove this? I can not use ARPES because channel length is around 5 um. I think ARPES requires larger films. I am using scotch tape method for exfoliation. Any help in this regard is highly appreciated. Thank you.

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# Proving direct band gap property of a semiconductor

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