RBS Spectrometry Analysis of Si3N4 on Si: SiO2 or SiOxNy?

  • Thread starter Thread starter physicist888
  • Start date Start date
AI Thread Summary
The discussion revolves around an RBS (Rutherford Back Scattering) experiment involving a Si3N4 thin film deposited on a silicon substrate. The main inquiry is about the outcome of oxidizing this thin film during deposition, specifically whether the resulting layer will be SiO2 or SiOxNy, and the reasoning behind this. It is noted that silicon nitride is generally resistant to oxidation at moderate temperatures, with oxidation primarily occurring through grain boundary diffusion at higher temperatures. The oxidation process is described as epitaxial, with the outcome depending on the duration of oxidation. Participants express a need for more detailed information about the oxidation conditions and the sample processing to better understand the resulting structure. There is also a mention of the possibility of sharing figures to aid in the discussion.
physicist888
Messages
63
Reaction score
0
hi all
its an RBS ( rutherford back scattering) experiment. a Si3N4 thin film deposit on a Si substrat. we make a spectrometry analysis, and we obtain the scattering yield spectrum.
now back to chemistry, if we made an oxydation for this thin film while it deposite on the substrat, we'r going to obtain a new thin film of: SiO2 or SiOxNy ? and why?

i can't really solve this question. its really a chemistry question, maybe its about electronegativity of elements.
 
Chemistry news on Phys.org
the new thin film obtained ( SiOxNy or SiO2 ) is deposite on the previous thin film Si3N4.
to be clear, before oxydation : Si/ Si3N4
after oxydation: Si/Si3N4/SiO2 or Si/Si3N4/SioxNy ?? and for which reason??
 
none know about this?
 
What are the conditions during oxidation? We need you to describe the oxidation process in more detail. Is this epitaxial oxidation on a previously grown nitride film? Also, we need a more complete description of the sample and its processing.

Silicon nitride, in general is pretty resistant to oxidation up to moderate temperatures. Above many hundreds of degrees C, the primary mode of oxidation is grain boundary diffusion. Of course, this doesn't apply to thin films.
 
actually, we have first Si/Si3N4 ( substrat/thin film) . then the Si3N4 is deposed under a oxygen flux ( Epitaxial). then a new structure will shown, and that's depends for the duration of oxydation. the question is wer're going to obtain which of the two structures mentioned below??
 
maybe I am going to scan the figure and depose it. is that possible to put figures in the forum??
 
Yes, it is possible. Click the "Go Advanced" option below the Quick Reply box, then click on "Manage Attachments" found below the Reply window (under Additional Options).
 
okay, i didnt scan it yet. tomorrow ill post it
 

Similar threads

Investigating Possible Impurities on RBS Spectra of a Rhodium-Silicon System
Replies
2
Views
2K
Creating Point Light Sources: Techniques, Alternatives & Bizarre Ideas
Replies
5
Views
3K
Equation for photocurrent dep. wavelength, diffusion length,
Replies
2
Views
2K
Birefringence and Automotive Window Tinting
Replies
9
Views
8K
I Progress In Calculating The HLbL Contribution To Muon g-2
Replies
0
Views
2K
Mathematica This Week's Finds in Mathematical Physics (Week 225)
Replies
1
Views
2K
Prospects of the canonical formalism in loop quantum gravity [Alexandrov, Roche]
Replies
26
Views
8K
Why, oh why, don't many physics programs EDUCATE?
3
Replies
128
Views
43K
What Defines True Genius Beyond IQ Tests?
Replies
32
Views
7K
Requesting suggestions for languages, libraries, and architectures for parallel (and sometimes non parallel) numerical and scientific computations
Replies
8
Views
4K

Hot Threads

Recent Insights

Back
Top