Shared contacted diffusion in layout

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SUMMARY

Shared contacted diffusion in CMOS layout allows for the sharing of diffusion regions between two nMOS transistors of different widths, which can help reduce parasitic capacitance. However, it is not possible to share diffusion regions between nMOS and pMOS transistors due to their differing doping types and well requirements. This technique is crucial for optimizing layout efficiency in analog design.

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  • Understanding of CMOS technology and its components
  • Knowledge of nMOS and pMOS transistor characteristics
  • Familiarity with layout design principles in VLSI
  • Basic concepts of parasitic capacitance in electronic circuits
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  • Research techniques for optimizing CMOS layout to minimize parasitic capacitance
  • Learn about the differences in doping types for nMOS and pMOS transistors
  • Explore advanced analog design principles and their impact on layout
  • Study the implications of shared contacted diffusion in multi-device layouts
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Analog designers, VLSI layout engineers, and anyone involved in optimizing CMOS circuit performance.

anhnha
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I am confused about shared contacted diffusion in CMOS layout.
Is it possible to use shared contacted diffusion for two nMOS transistors with different widths?
BTW, two nMOS and pMOS transistors are never shared contacted diffusion, right?
 
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Yes you can share a diffusion between devices with different widths, that is no problem. One device extends farther than the other. In fact you should share diffusion as much as possible to reduce parasitic capacitance.

No you can't share diffusions between PMOS and NMOS devices. This is because the diffusions are different doping types! (in other words they are not in the same well). You are correct about that.
 
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Thank you.
I am learning about analog design. Hope you could help!
 

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