Some question about Maxwell-Boltzmann statistics

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The discussion centers on the conditions for degenerately doped N-type and P-type silicon using Maxwell-Boltzmann statistics. For N-type silicon, the doping concentration (Nd) must exceed the effective density of states in the conduction band (Nc), while for P-type silicon, the acceptor concentration (Na) must exceed the effective density of states in the valence band (Nv). In degenerately doped N-type semiconductors, the Fermi level shifts into the conduction band, whereas in P-type semiconductors, it moves into the valence band. This shift significantly affects the ionization probability of the dopant atoms, enhancing their ionization.

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Nicky302
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alright i juz want to say I am stucked in examples problem, the question is:

A semiconductor is said to be degenerately doped when n>-Nc or p>-Nv. assuming Maxwell Boltzmann statistics, determine the values of Nd and Na needed to obtain degenerately doped N- and P- type silicon. Where is the Fermi Level in a degenerately doped N-type and P-Type semiconductor? What happens to the ionisation probability of the dopant atoms?
 
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well i don't know the complete answer but i just know that in case of denerate N type semiconductor , fermi level moves into the conduction band. While in case of P type semiconductor it moves into valence band.
 

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