Spikes in CMOS Inverter transients

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    Cmos Inverter
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Discussion Overview

The discussion revolves around the phenomenon of voltage spikes observed in a CMOS inverter during transient states, particularly when transitioning from high to low output. Participants explore the causes of these spikes in the context of simulations conducted using CADENCE, focusing on the effects of input signal rise and fall times, load conditions, and parasitic capacitance.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • One participant describes observing a sharp spike when the output transitions from low to high, which becomes more pronounced with lower rise and fall times of the input signal.
  • Another participant questions whether the spike is a current or voltage spike.
  • A participant suggests that during the transition, both transistors in the inverter may conduct simultaneously, leading to a rush of current.
  • It is clarified that the spike occurs when the output is going from high to low.
  • A suggestion is made to indicate voltage levels and to consider the load conditions, with a recommendation to use a resistive load to improve the situation.
  • One participant mentions a tutorial that connects a capacitor to the inverter for output load, speculating that this might be relevant to the observed spikes.
  • Another participant identifies parasitic capacitance, particularly gate-drain capacitance, as a likely cause of the spikes, explaining that the voltage across this capacitance cannot change instantaneously during transitions.
  • A participant notes that the height of the spike may be limited by a pn junction to Vcc and suggests that increasing the rise time of the gate voltage could reduce the spike's prominence.
  • Agreement is expressed regarding capacitive coupling as a contributing factor, with further discussion on the importance of threshold voltages and the behavior of the MOSFETs during transitions.

Areas of Agreement / Disagreement

Participants generally agree that capacitive coupling and parasitic capacitance are significant factors contributing to the observed voltage spikes. However, there are multiple perspectives on the specific mechanisms and conditions affecting these spikes, and the discussion remains unresolved regarding the best approaches to mitigate them.

Contextual Notes

Participants mention various load conditions and configurations, indicating that the behavior of the inverter may depend on specific circuit parameters and assumptions about the simulation environment.

reddvoid
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I am simulating cmos inverter in CADENCE
I am getting a sharp spike when output is going from low to high
and spike became more amplified like when i made rise time and fall time of input rectangular pulse signal very low . . .can somebody explain why this happening ?
 
Last edited:
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A current spike or a voltage spike?
 
reddvoid said:
I am simulating cmos inverter in CADENCE
I am getting a sharp spike when output is going from low to high
and spike became more amplified like when i made rise time and fall time of input rectangular pulse signal very low . . .can somebody explain why this happening ?

With the CMOS inverter, isn't there a point during transition where both of the devices are conducting simultaneously? With static input, one or other of the transistors is fully OFF, but during transition from one state to the other, for a moment both transistors are partly ON, hence the rush of current you observe.
 
its a voltage spike
like this
attachment.php?attachmentid=73055&stc=1&d=1410509513.jpg

sry, its happening when output is going from high to low
 

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It would be helpful if you were to indicate 0V and +Vcc levels.

I understand this is for an unbuffered inverter?

Your output's load is currently an open circuit? Try a reasonable load, and see how this improves. Say, 1MΩ for starters. Just guessing, but it could well be feedthrough of the input.
 
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I notice this Cadence tutorial connects a 50 f(emto?)F capacitor to their cmos inverter for an output load.
Might that be its purpose?

See page 22 ff...
http://scholar.cu.edu.eg/?q=hmostafa/files/cadencetutorial.pdf

Figure 3 on page 38 shows a similar spike caused by changing transistor size.

Wow that's quite a simulation...

just a guess

old jim
 
snapshots

this is the circuit
attachment.php?attachmentid=73070&stc=1&d=1410523619.png

simulation
attachment.php?attachmentid=73071&stc=1&d=1410523619.png

attachment.php?attachmentid=73073&stc=1&d=1410523763.png


Yes output was floating,
then i tried 5fF load
and resistive load from 1k to 1M.
still getting spikes in all the simulations .
attachment.php?attachmentid=73074&stc=1&d=1410524786.png

different cap loads
 

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These spikes are caused by parasitic capacitance between the inverter input and output. Most of it is the gate-drain capacitance in the MOS transistor. When the output is high and the input transitions from low to high, the voltage across this parasitic capacitance cannot change instantaneously, so some of the input step gets coupled to the output. It is a real effect. The spike is larger on the rising edge of the input because the PMOS G-D capacitiance is larger than the NMOS (I think - you could check this in the SPICE model by looking at the Cgd parameter).
 
You are seeing it because it's meant to be there. If a problem you might see it reduce if you were to increase the risetime of the gate voltage, so it rises less sharply. The height of the spike is probably limited (clamped) by a pn junction to Vcc. Adding load capacitance is not viable.
 
  • #10
I agree with phyzguy, it is capacitive coupling.

The threshold voltages of the two mosfets must be chosen so there is little through current during a transition.
When the input goes high, the upper mosfet should turn off before the lower mosfet turns on.

During the short period that both mosfets are off, the inverter input is being capacitively coupled directly to the output load by the CGD of both mosfets in parallel.

The ratio of transition spike energy is related to the ratio of mosfet CGD.
The effective CGD is voltage dependent and highest during transition.
 
  • #11
got it :) Thanks guys .
 

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