The surface recombination velocity of electrons and holes at a metal-semiconductor contact varies based on the specific details of the contact and the materials involved. It is established that electron and hole recombination velocities differ, particularly in ferromagnetic contacts, which impede minority spin recombination. Ambipolar transport, where both charge carriers contribute simultaneously, is uncommon. Experimental benchmarking is essential for accurate analysis of surface recombination velocities, as theoretical values are often uncertain.
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