The bandgap values for Gallium Arsenide (GaAs) and Silicon (Si) are critical for understanding their optical absorption properties in semiconductor applications. The bandgap for GaAs is approximately 1.42 eV, while Silicon has an indirect bandgap of about 1.12 eV. These values are essential for verifying experimental calculations in lab reports related to semiconductor physics. For further details, refer to the Ioffe Institute's resources on GaAs and Si band structures.
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Defennnder said:I'm doing a lab report on optical absorption of semiconductors. As such I would like to verify the values of the bandgap Eg which I have calculated through experiment. I tried searching Google but I got a lot of results to technical papers which didn't help at all. I would like to know if anyone here can tell me the bandgap value for both GaAs and Si. Thanks.