What to do to improve Cu adhesion?

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Adhesion issues are prevalent when growing Cu on SiO2/Si stacks at high temperatures around 800°C. To improve adhesion, it is recommended to deposit a thin layer of a metal such as Cr or Ti before the Cu layer. A thickness of 25-50 nm for the adhesion layer is suggested, as this can enhance the bonding between the Cu and the underlying SiO2. While Ti is often used for Au in similar situations, its effectiveness for Cu is uncertain, but it remains a viable option for improving adhesion in this context.
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I'm doing some growths on Cu/SiO2/Si stacks at temps around 800C. I'm getting adhesion issues clearly, and I know Cu definitely doesn't do that well.

What would be recommended? Should I put down a layer of Cr (or anything else?) first? And how thick of a layer? My SiO2 is about 1 micrion and Cu is about 300 nm thick.

Thanks!
 
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I'm unsure as to how well it would work for Cu, but quite often in our lab if we want to put down Au but have adhesion issues, we'll put down some Ti beforehand. Maybe 25-50nm?
 
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