Extrinsic semiconductors exhibit intrinsic behavior at high temperatures due to the dominance of thermally excited electrons in the conduction band over those contributed by doping. As temperature increases, the number of thermally generated charge carriers, as described by Fermi-Dirac statistics, surpasses the contribution from doping, leading to a negligible effect from doped carriers. The critical condition for this transition is defined by the inequality kT >> | E_F,intrinsic - E_F,doped |, where k is the Boltzmann constant and T is the temperature.
PREREQUISITESPhysicists, electrical engineers, and materials scientists interested in semiconductor behavior at varying temperatures.