Why does a MOSFET heat up with slow rise/fall times at gate?

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Discussion Overview

The discussion centers around the heating of MOSFETs due to slow rise and fall times at the gate when driving a DC motor. Participants explore the implications of these slow transitions on power loss and device performance, touching on related concepts in transistor behavior and circuit design.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • Some participants suggest that slow rise and fall times lead to increased power loss in MOSFETs due to overlapping current and voltage waveforms during switching transitions.
  • One participant notes that the heating occurs because the MOSFET carries current while having a voltage drop across it during the transition period.
  • There is a question about whether similar phenomena occur in BJTs and the rationale behind using inverter BJTs to improve rise and fall times.
  • A proposed solution involves inserting a BJT inverter to reduce rise/fall times, which is said to allow the MOSFET to switch more quickly and reduce time spent in the linear range.
  • Another participant explains that when the MOSFET is ON, the voltage across it is low, resulting in minimal power, while when it is OFF, the voltage is high but current is zero, leading to low power. The significant power occurs only during the transition phases.
  • There is a mention of different types of MOSFETs, specifically focusing on n-channel enhancement mode MOSFETs and their characteristics, including the intrinsic diode.
  • One participant emphasizes the importance of fast transient times for maintaining waveform integrity at higher frequencies.

Areas of Agreement / Disagreement

Participants express varying levels of skepticism and curiosity regarding the effects of slow rise/fall times on MOSFET heating and the behavior of BJTs. There is no clear consensus on the implications or the best solutions, indicating ongoing debate and exploration of the topic.

Contextual Notes

Some claims are dependent on specific circuit configurations and assumptions about load characteristics, such as the inductive nature of the motor. The discussion includes unresolved questions about the relationship between rise/fall times and switching speeds in transistors.

saad87
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I have a pulse width modulator that's composed of a triangular wave generator and a comparator. This outputs a pulse width modulated signal, whose duty cycle I set by changing the comparator's V- voltage.

I have measured the rise and fall times of my output waveform and they are 27uS (for both). I have been told by someone that such a slow waveform will cause power losses in the MOSFET I am using to drive a simple, small, DC Motor. I was told that this because with with a slow rise/fall time, the current and voltage waveforms overlap by a small bit and since P=VI, this causes power loss.

Is this true? I'm skeptical because I don't understand why current and voltage are out of phase in the first - is this because the motor is an inductive load?
 
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With a slow rise and fall, there is an increased time during which the MOSFET is carrying some current AND has some voltage drop across it. Result. It gets hot.
Bob S
 
Thank you!

Does this phenomena occur in BJTs too? If so, why are inverter BJTs circuits used to improve the rise/fall times of the waveform?

In my case, I was recommended that I should insert a BJT inverter between the output of the comparator and the input of the MOSFET. There is a resistor connected between the collector and power supply. This resistor ends up making a RC circuit with the input capacitance of the MOSFET and due to a time constant of 1uS, the rise/fall time is much faster.

Does this make sense?

Also, do slow rise/fall times affect the switch speed of a transistor?
 
saad87 said:
Thank you!

Does this phenomena occur in BJTs too? If so, why are inverter BJTs circuits used to improve the rise/fall times of the waveform?

In my case, I was recommended that I should insert a BJT inverter between the output of the comparator and the input of the MOSFET. There is a resistor connected between the collector and power supply. This resistor ends up making a RC circuit with the input capacitance of the MOSFET and due to a time constant of 1uS, the rise/fall time is much faster.

Does this make sense?

Also, do slow rise/fall times affect the switch speed of a transistor?

Exactly, an inverter circuit would be able to source/sink more current than the comperator, allowing the mosfet to switch on and off more quickly, meaning that it will be in the linear range for a shorter amount of time, thus reducing switching losses.
 
Is this true? I'm skeptical because I don't understand why current and voltage are out of phase in the first - is this because the motor is an inductive load?

In the following circuit,

FET driver.PNG


Can you see that if the FET is ON, there will be very little voltage across it, so this multiplied by the current results in very little power.
If the FET is OFF, there will be maximum voltage across the FET but no current, so the power will be zero or very low.

It is only when the FET is turning ON and turning OFF that there can be a large product of voltage and current. If this takes a long time, it can result in heating of the FET.
 
OSFETs come in four different types. They may be enhancement or depletion mode, and they may be n-channel or p-channel. We are only interested in n-channel enhancement mode MOSFETs, and these will be the only ones talked about from now on. There are also logic-level MOSFETs and normal MOSFETs. We can use either type.

The source terminal is normally the negative one, and the drain is the positive one (the names refer to the source and drain of electrons). The diagram above shows a diode connected across the MOSFET. This diode is called the "intrinsic diode", because it is built into the silicon structure of the MOSFET. It is a consequence of the way power MOSFETs are created in the layers of silicon, and can be very useful. In most MOSFET architectures, it is rated at the same current as the MOSFET itself.
 
Eric McClean said:
OSFETs come in four different ...

Please don't blindly copy and paste stuff from other sites. If you have a link that you think might provide good information, just post it.

http://robots.freehostia.com/SpeedControl/MosfetBody.html

Also, do slow rise/fall times affect the switch speed of a transistor?

Absolutely. A faster transient time allows the resulting waveform to maintain its shape longer as frequency increases until it turns into mush.
 

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