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why does diode breakdown into conduction when reverse biased?
The discussion centers on the phenomenon of diode breakdown when reverse biased, exploring the mechanisms behind this behavior, including Zener and avalanche breakdown processes. Participants seek to clarify the underlying concepts and provide various analogies and explanations related to the topic.
Participants express varying levels of understanding and provide different analogies and explanations, indicating that multiple competing views remain on the precise mechanisms and interpretations of diode breakdown.
Some explanations rely on analogies that may not capture all technical details, and there are unresolved aspects regarding the specific conditions under which breakdown occurs.
The strength of the depletion zone electric field increases as the reverse-bias voltage increases. Once the electric field intensity increases beyond a critical level, the p–n junction depletion zone breaks down and current begins to flow, usually by either the Zener or the avalanche breakdown processes. Both of these breakdown processes are non-destructive and are reversible, as long as the amount of current flowing does not reach levels that cause the semiconductor material to overheat and cause thermal damage.