Why does diode breakdown into conduction when reverse biased?

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Discussion Overview

The discussion centers on the phenomenon of diode breakdown when reverse biased, exploring the mechanisms behind this behavior, including Zener and avalanche breakdown processes. Participants seek to clarify the underlying concepts and provide various analogies and explanations related to the topic.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • Some participants explain that the depletion zone electric field increases with reverse-bias voltage, leading to breakdown when it surpasses a critical level, allowing current to flow.
  • Others describe the breakdown processes as either Zener or avalanche breakdown, noting that these are typically non-destructive and reversible unless excessive current causes thermal damage.
  • A participant offers a simplified analogy comparing the PN junction to a hill, suggesting that a high reverse voltage is needed to overcome the energy barrier for current flow in the reverse direction.
  • Another participant elaborates on the chain reaction of electron acceleration and lattice interaction that contributes to the breakdown process.

Areas of Agreement / Disagreement

Participants express varying levels of understanding and provide different analogies and explanations, indicating that multiple competing views remain on the precise mechanisms and interpretations of diode breakdown.

Contextual Notes

Some explanations rely on analogies that may not capture all technical details, and there are unresolved aspects regarding the specific conditions under which breakdown occurs.

samy
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why does diode breakdown into conduction when reverse biased?
 
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i didn't get, so could you please elaborate my above statement ?
 
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Elaborate on what? You must be more precise in your question.

http://en.wikipedia.org/wiki/P–n_junction#Reverse_bias
The strength of the depletion zone electric field increases as the reverse-bias voltage increases. Once the electric field intensity increases beyond a critical level, the p–n junction depletion zone breaks down and current begins to flow, usually by either the Zener or the avalanche breakdown processes. Both of these breakdown processes are non-destructive and are reversible, as long as the amount of current flowing does not reach levels that cause the semiconductor material to overheat and cause thermal damage.

These links explains the two reverse breakdown modes.
http://en.wikipedia.org/wiki/Zener_breakdown
http://en.wikipedia.org/wiki/Avalanche_breakdown
 
While the above is correction, a handwavy, more pop-science version would be:

If you put enough reverse bias on a diode than you can accelerate electrons hard enough that when they hit a lattice site they can release more electrons and so on, making a chain reaction that causes a large current to flow.
 
I'll try an explanation. Think of the PN junction as a hill with a steep angle, not 90 say 80 degrees or so. When a bowling ball is sent down the hill, no problem it just rolls down the hill and proceeds on. But try to send one up the hill and you need a very high velocity to achieve this. The PN junction is an energy hill in one direction the voltage "pressure" that pushes it down the hill only takes a little energy to travel that distance. However in the opposite direction much more energy is needed, and the two mechanisms, as pointed out in Baluncore's response are Zener or avalanche breakdown process. Both present a tipping point (particular voltage or pressure) of the necessary energy to achieve useful amounts of current in the reverse direction. Then analogdesign's response elaborates further on the events that occur in the atomic lattice.
 

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