- #1
alexhong81
- 6
- 0
just wondering, what is the difference between Base-Emitter Saturation Voltage and Base-Emitter on Voltage ?
VBE (sat) = 0.5V
VBE (on) = 0.7V
VBE (sat) = 0.5V
VBE (on) = 0.7V
BJT is in active region when: Nearly VCE > VBEonalexhong81: BJT in active region, VCE>VCE(sat)
The base to emitter voltage is a crucial parameter in a transistor as it controls the flow of current between the base and emitter terminals. It acts as a switch, allowing or blocking the flow of electrons from the emitter to the collector, which ultimately determines the output current of the transistor.
The base to emitter voltage directly affects the amplification or gain of a transistor. By increasing this voltage, the transistor can be driven into saturation, resulting in a larger output current. However, it is essential to keep the voltage within a certain range to prevent damage to the transistor.
If the base to emitter voltage is too high, the transistor can be damaged due to excessive current flow. This can lead to overheating and ultimately failure of the device. It is essential to use appropriate circuit design and voltage regulation to prevent this from happening.
Yes, the base to emitter voltage can vary for different types of transistors. For example, in a bipolar junction transistor (BJT), the base to emitter voltage is typically around 0.7 volts, while in a field-effect transistor (FET), it can range from 1-5 volts. It is essential to consult the datasheet for the specific transistor to determine its base to emitter voltage.
Temperature can affect the base to emitter voltage by changing the characteristics of the transistor. In general, an increase in temperature can cause the base to emitter voltage to decrease, resulting in a decrease in amplification. It is important to consider temperature variations in transistor circuits and use appropriate cooling measures if necessary.