How to add HZO as an Oxide gate in Silvaco TCAD?

Thread starter mhr0003
Start date Jan 24, 2023
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Gate Mosfet silvaco Simulation software

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Jan 24, 2023

mhr0003

TL;DR Summary: Help me add hafnium zirconium oxide in Silvaco

I am trying to simulate a Gate-All-Around FET in Silvaco TCAD for my thesis but I can't figure out how to add HZO (Hf_0.5Zr_0.5O₂). I would really appreciate it if anyone could help me with the code for HZO or help me in any other way.
Thank you.

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Feb 8, 2023

phyzguy

Science Advisor

Here are some examples from Silvaco:

1. How do I add HZO as an Oxide gate in Silvaco TCAD?

To add HZO as an Oxide gate in Silvaco TCAD, follow these steps:

Open the Technology File Editor in Silvaco TCAD.
Click on the "Oxides" tab and select "New Oxide".
In the "Name" field, enter "HZO" and select "High-k" as the material type.
Adjust the material properties as desired, such as the dielectric constant and thickness.
Save the changes and the HZO oxide gate will now be available for use in your simulations.

2. What is the dielectric constant of HZO?

The dielectric constant of HZO (Hafnium Zirconium Oxide) can vary depending on the composition and manufacturing process, but it is typically between 20-30. This high dielectric constant makes HZO a suitable material for use as an oxide gate in semiconductor devices.

3. Can I use HZO as an Oxide gate in all types of semiconductor devices?

Yes, HZO can be used as an Oxide gate in a variety of semiconductor devices, including MOSFETs, FinFETs, and other advanced devices. However, it is important to carefully select the material properties and process parameters to ensure optimal performance for your specific device.

4. Are there any special considerations when using HZO as an Oxide gate in Silvaco TCAD?

When using HZO as an Oxide gate in Silvaco TCAD, it is important to ensure that the material properties and process parameters are accurately defined. This includes the dielectric constant, thickness, and interface properties. It is also recommended to perform simulations with different HZO gate structures to optimize the device performance.

5. What are the advantages of using HZO as an Oxide gate in Silvaco TCAD?

There are several advantages to using HZO as an Oxide gate in Silvaco TCAD, including its high dielectric constant, which allows for better control of the gate voltage and improved device performance. HZO also has a high thermal stability, making it suitable for high temperature applications. Additionally, HZO has a low leakage current, which can improve the overall power efficiency of the device.