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Perla Rosales
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Hello i have a question, what is the growth temperature, for this reconstruction film using the MBE technique
The growth temperature for the Reconstruction film of GaAs(0 0 1)-c(4x4) is typically around 550°C to 600°C.
The growth temperature is important because it determines the quality and properties of the film, such as crystallinity and surface roughness.
If the growth temperature is too low, the film may not form properly, leading to defects and poor adhesion to the substrate.
A higher growth temperature can result in a smoother and more uniform film, as well as improved electrical and optical properties.
While the ideal growth temperature can vary depending on specific experimental conditions, a range of 550°C to 600°C is commonly used for growing high-quality GaAs(0 0 1) films with a c(4x4) reconstruction.