Calculating Resistivity of Doped Si: P and As Substrate Comparison"

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To calculate the resistivity of doped silicon with both P and As substrates, the mobility should be derived from a curve based on the total doping concentration rather than using a simple formula like μ_n(N_d + N_d). The total concentration, N_{tot}, should account for both dopants, but typically one species will dominate the concentration. Thus, using the highest dopant concentration in the region will yield a more accurate result. For precise calculations, refer to resources that detail the relationship between mobility and doping concentration.
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How do I calculate the resistivity of a doped Si if I have to substrate of the same type. Let's say a P and As doped Si. Is the mobility given by, \mu_n(N_d + N_d), or should I do this in an other way? Further, when I calculate the resistivity, is the concentration, N_{tot} = N_d(P)+N_d(As)?

Thanks!
 
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The mobility itself is a complicated function of the doping concentration and it depends on the total dopant, not on just Nd or Na. So the way to do it is to get the mobiliity off a curve based on the total doping concentration and then calculate the resistivity using the standard formula. Typically the concentration is completely dominated by one species over another so the answer won't change much as long as you use the highest dopant concentration in the region. This webpage explains the process: http://ecee.colorado.edu/~bart/book/mobility.htm
 
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