How to Calculate On-State Resistance of a 4H-SiC Schottky Diode?

[kcmei]

Hi guys,

I need some help with this question:

calculate the on state resistance of the following 4H-SiC Schottky diode device if the epitaxial layer is 10 micrometer and thickness of the substrate is 300 micrometer.

The Attempt at a Solution

i was thinking of using the equation for depletion width then the equation for R(on) as they are the only equations I know:

W=2Vb/Ec
R(on) = W/q.mu.N

but i am only given the layer thicknesses how can i work out the depletion width ? If i can get the depletion width then i think i can get R(on)

any help would be greatly appreciated.

 

[mark726]

Hi there,

Thank you for reaching out for help with this question. I would suggest approaching this problem by first understanding the basics of a Schottky diode and how it works. From there, you can use the given information to calculate the on state resistance.

The depletion width is the distance between the metal contact and the semiconductor material in a Schottky diode. In this case, we can use the given information of the layer thickness and substrate thickness to calculate the depletion width. The depletion width can be calculated using the following equation:

W = sqrt(2*epsilon*Vb/q*N)

Where W is the depletion width, epsilon is the permittivity of the semiconductor material (in this case 4H-SiC), Vb is the built-in potential, q is the elementary charge, and N is the doping concentration.

Once you have calculated the depletion width, you can use it to calculate the on state resistance using the equation you mentioned, R(on) = W/q.mu.N, where mu is the carrier mobility.

I hope this helps guide you in the right direction. If you need any further assistance, please don't hesitate to ask. Good luck with your calculations!