Cmos imaging sensor response

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Discussion Overview

The discussion revolves around the response characteristics of CMOS imaging sensors, particularly focusing on how the sensor's measurements are affected by varying irradiance and exposure times while maintaining a constant total exposure. The conversation explores the implications of these variables on sensor performance and the underlying electronic processes involved in converting light to digital signals.

Discussion Character

  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions whether the sensor response remains constant with variable irradiances and exposure times, assuming constant total exposure.
  • Another participant suggests that an ideal sensor measures the accumulated number of photons, implying that the rate of photon arrival does not affect the measurement.
  • A counterpoint is raised that photons are converted to charge carriers, and while the conversion of photons to charge may be linear, the conversion of charge to a digital number may not be linear.
  • Further clarification indicates that the charge-to-voltage conversion in CMOS sensors is inherently nonlinear, contrasting with CCD sensors, which are described as having a more linear response.
  • It is noted that consumer devices typically operate in a region where the charge-to-digital conversion is approximately linear, with calibration methods employed to maintain this linearity.
  • Discussion includes the possibility of using a non-linear output amplifier to match the response of other imaging technologies, although this is not common practice in most devices.

Areas of Agreement / Disagreement

Participants express differing views on the nature of photon accumulation and the linearity of charge-to-digital conversion in CMOS sensors. There is no consensus on the implications of these factors for sensor response under varying conditions.

Contextual Notes

The discussion highlights potential limitations in understanding the sensor's behavior, including assumptions about linearity in charge conversion and the effects of dark current and leakage on measurements. The complexity of the sensor's electronic circuitry is acknowledged but not fully resolved.

nbo10
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Hi all,
I have a question about the response of a cmos imaging sensor. The total exposure is defined as the irradiance * pixel area * exposure time and it can be varied by changing either the irradiance or the exposure time. Would the sensor response remain constant if measurements are taken with variable irradiances and exposure times under the condition that the total exposure is constant?

My naive thinking would assume that the sensor would measure the same value at constant total exposure independent of the irradiance and exposure time values. Or are there other details, particular the circuit used convert charge to a digital number, that effect the sensor value? Thanks
 
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nbo10 said:
My naive thinking would assume that the sensor would measure the same value at constant total exposure independent of the irradiance and exposure time values.
An ideal sensor measures the accumalated number of photons - it doesn't care about the rate they arrived.
In practice real sensors have a dark current, as signal that builds up with time even without light, and a leakage where very low level signals may be lost
 
NobodySpecial said:
An ideal sensor measures the accumalated number of photons - t

Well this is wrong. Photons are not accumulated. There is a photon to charge conversion and charge carrier is accumulated. Now, the conversion of photons to change is linear but the conversion of charge to digital number might not be linear. The charge-to-digital number conversion is the heart of my question.
 
nbo10 said:
Well this is wrong. Photons are not accumulated.
Didn't say they were - I said it measured the number of photons accumulated - as opposed to measuring their rate as a photocell or photocathode might.

conversion of charge to digital number might not be linear.
The charge to voltage on the pixel unit cell is inherently not linear for a CMOS sensor - as opposed to a CCD where it almost is. But most real devices, especially consumer units, are run in a region where they are pretty linear.

The charge-to-digital number conversion is the heart of my question.
The per pixel charge->voltage conversion and the output amp are generally pretty much linear - it's too hard to do calibration otherwise.
You could make the output amp->ADC non-linear to match the response of photographic film or of an older tube TV camera but most don't.
The normal way is just ot have a programmable gain stage and switch in a different linear multiplication before the ADC.
 

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