Concentrations of electrons in intrinsic semi-conductor

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The formula for electron concentration in intrinsic semiconductors is expressed as n ∝ T^(3/2) exp(Eg/(2kBT)), indicating that n is proportional to the temperature and the exponential term. The discussion clarifies that "n" represents a density, which has units of m^-3, while the right-hand side of the equation has a different unit structure. The temperature dependence is highlighted as the effective density of states related to the conduction band edge. Understanding the proportional relationship is essential for accurate calculations in semiconductor physics. This clarification aids in applying the formula correctly in practical scenarios.
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Hi, I've just started using the formula for the abovie which is given as:

n t^3/2 exp(Eg/2kBT)

however instead of n= I think the sign is n is proportional, like this ∞

I was wondering which would be correct?

Thanks
 
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jendrix said:
Hi, I've just started using the formula for the abovie which is given as:

n t^3/2 exp(Eg/2kBT)

however instead of n= I think the sign is n is proportional, like this ∞

I was wondering which would be correct?

Thanks

Yes it's definitely proportional to, not equals. That is, n \propto T^{3/2} \exp(Eg/(2k_BT)).

You can "see" this easily enough by looking at the dimensions (units) of each side of the equation. The term "n" is a density, and therefore m^{-3} (or cm^{-3} etc), whereas the unit on the RHS is T^1.5.

The "T^(3/2)" factor is merely the temperature dependent part of the equation for the "effective density of states referred to the conduction band edge", if you want to google that.
 
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I see now, thanks :)
 
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