Derivation of carrier density formula

AI Thread Summary
The discussion focuses on deriving the carrier density formula n = (1/qV) ∫_0^I τ dI from related equations. The user references a textbook that defines the relationship between relaxation time τ and resistance R(n), expressed as R(n) = An + Bn^2 + Cn^3, and the injected current I = qVR(n). There is confusion regarding how to connect these equations to derive the initial formula and the relationship between τ and I, specifically τ^2 = A^2 + (4B/qV)I. The user expresses frustration with their inability to progress in the derivation process. Clarification on these mathematical relationships is sought to resolve the mental block.
McKendrigo
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Hi there,

Not sure if this is in the best section, but here goes...

I'm trying to establish how a formula from a paper I have read has been derived. The formula is:

n=\frac{1}{qV} \int_0^I{\tau} dI

where n is the carrier density, q is the elementary charge, V is the volume of the semiconductor active area.

From another source (textbook) I have:

\frac{1}{\tau} = \frac{\partial R}{\partial n}

where

R(n) = An + Bn^2 + Cn^3

and also the injected current I is related to n as follows:

I = qVR(n)

I have a complete mental block on how whether I can derive the first equation from the following three - any help would be appreciated!
 
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I am also confused about something from the textbook: it uses equations 2,3 and 4 above to define the relationship between \tau and I as being:

\frac {1}{\tau^2} = A^2 + \frac{4B}{qV}I}

I just keep going round in circles when I try to derive this from equations 2,3 and 4 :(
 
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