Determining N-Type and P-Type Semiconductor Characteristics

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To determine if a semiconductor is n-type or p-type, one must calculate the electron and hole concentrations based on the doping levels of donor (phosphorus) and acceptor (boron) impurities. In the case of silicon doped with 3x10^6 boron and 2.9x10^6 phosphorus, the calculations indicate that it is primarily an n-type semiconductor due to the higher concentration of donor impurities. Once the type is established, the Fermi level's position relative to the conduction band edge (Ec) can be found using the equation Ef - Ei = kT ln(N(donor) / N(intrinsic)). This approach allows for accurate characterization of the semiconductor's properties at thermal equilibrium. Understanding these concepts is crucial for semiconductor applications in electronics.
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for the semiconductor which doping both donor and acceptor impurities...
for example,determine the hole and electron density thermal equlibrium densities and the location of fermi level with respect to Ec,for a silicon at 300K that is doped with 3x10^6 boron and 2.9x 10^6 phospohorus...the question i asked is this doping semiconductor is N or P type semiconductor?isn"t we need determine its is N and P type semiconductor first?
 
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No, you find out if it's primarily n or p-type by calculating the electron and hole concentration.
 
ooo..okay,thanks ya^^...then about finding the location of the fermi level with respect to Ec,after we had determine it is N type semiconnductor,then we use the equation of Ef-Ei=kt ln N(donor) / N(intrinsic)?
 
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