Device simulation with Silvaco ATLAS

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SUMMARY

This discussion focuses on simulating interface traps in power MOSFETs using the Silvaco ATLAS tool. Users can introduce interface traps by adding sheet charge at the interface, which is managed through boundary conditions. The participant is using an older version of ATLAS that lacks the spectrum library, necessitating the creation of a custom SPECT file. Assistance is sought for utilizing this file as an input and for plotting the electroluminescence (EL) of the organic04 example.

PREREQUISITES
  • Familiarity with Silvaco ATLAS simulation tool
  • Understanding of power MOSFET device physics
  • Knowledge of boundary conditions in semiconductor simulations
  • Experience with creating and using SPECT files
NEXT STEPS
  • Research how to implement sheet charge in Silvaco ATLAS simulations
  • Learn about boundary condition settings in Silvaco ATLAS
  • Explore the process of creating and utilizing SPECT files in Silvaco
  • Investigate methods for plotting electroluminescence in Silvaco ATLAS
USEFUL FOR

This discussion is beneficial for semiconductor device engineers, researchers working with power MOSFETs, and users of Silvaco ATLAS seeking to enhance their simulation capabilities.

biju4u90
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How can I give interface traps while simulating a power MOSFET in Silvaco ATLAS tool?
 
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One way to simulate interface traps in silvaco is to add a sheet charge at the interface. This is controlled by the boundary conditions defined at the interface.
 
i have an old version of atlas and it dosent have spectrum library so i create a SPECT file myself but i can't use it as an input file,please help me, i want to plot EL of organic04 example
 

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