What are the effects of exceeding built-in potential in a P-N junction diode?

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Exceeding the built-in potential in a P-N junction diode under forward bias could lead to a significant increase in current due to the reinforcement of diffusion and drift currents. This scenario suggests that a large current could flow through the diode, potentially creating an ideal situation for conductivity. If the drift current becomes strong enough, it could result in charge carriers colliding with lattice atoms, generating additional carriers and further enhancing current flow. The interaction would create an electric field opposing the equilibrium electric field, allowing both drift and diffusion to work together. This discussion highlights the potential for substantial current generation when the built-in potential is surpassed in practical applications.
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What would happen if forward bias in a P-N junction were more than built-in potential? Could we reach to this situation practically?
 
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what do you think, and why?
 
I think in this situation, diffusion and drift currents would strengthen each other and a very large current would pass through the diode and therefore it would be an ideal situation. Could you please guide me if I am wrong?
 
What do you think would happen if the drift current magnitude got so strong that a charge carrier could collide with a lattice atom and knock another charge carrier out?
 
I think an electric field would be made in the opposite direction of the equilibrium electric field, so that we have both drift and diffusion in the same direction strengthening each other, and due to collision with bound electrons in the new depletion region,new carriers would be made and drifted. therefore a very large current would be made. Could you please guide me.
 

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