Easy transistor question: NPN--the corresponding change?

AI Thread Summary
The discussion focuses on calculating the collector current of an NPN transistor at a lower VBE of 0.70V compared to 0.76V, given a collector current of 10mA at 350K. Concerns are raised about the high operating temperature, but it is clarified that 350K is within typical limits for many transistors. The simplified Ebers-Moll equation is suggested as a relevant tool for relating emitter current to VBE, saturation current, and temperature. Participants emphasize the exponential relationship between collector current and VBE, recommending the creation of equations to find the current ratio for the two VBE values. The discussion concludes that understanding these relationships is key to solving the problem effectively.
adamaero
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Homework Statement


Given: an npn transistor having VBE = 0.76V for a collector current of 10mA at T=350 K (n=1) Find the corresponding collector current for VBE = 0.70V

2. Relevant questions
a) Wouldn't that temperature be way to high for the transistor to act normally?? I mean 350K is 170F.
b) What equations are relevant? Do I need to use diode equations? Which one, please. I have a very large book, and there are equations everywhere.

The Attempt at a Solution


I don't really understand the load line base-emitter junction characteristics...
I know this has something to do with it:
https://wiki.analog.com/_detail/uni...university:courses:electronics:text:chapter-9
 
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adamaero said:

Homework Statement


Given: an npn transistor having VBE = 0.76V for a collector current of 10mA at T=350 K (n=1) Find the corresponding collector current for VBE = 0.70V

2. Relevant questions
a) Wouldn't that temperature be way to high for the transistor to act normally?? I mean 350K is 170F.
No.
b) What equations are relevant? Do I need to use diode equations? Which one, please. I have a very large book, and there are equations everywhere.

The Attempt at a Solution


I don't really understand the load line base-emitter junction characteristics...
I know this has something to do with it:
https://wiki.analog.com/_detail/university/courses/electronics/text/chptr9-f4.png?id=university:courses:electronics:text:chapter-9[/QUOTE]
No it doesn't.
There is a simple equation("simplified Ebers-Moll equation) relating emitter current to Vbe, saturation current, and T. It assumes Vce > Vbe but not excessively so (not in Early region). Saturation current is the base-emitter reverse-voltage leakage current. Limit this equation in comparing the same transistor in differing bias conditions, which is what you're doing here. The saturation current varies very widely from unit to unit and over temperature, but this can be ignored if all you're doing is varying the bias parameters (Vbe and iE etc.) You can also assume alpha = 1.
 
adamaero said:
a) Wouldn't that temperature be way to high for the transistor to act normally?? I mean 350K is 170F.
That is a typical computer CPU temperature, and some transistors are rated for much higher temperatures.
 
It is rather simple.
Based on the knowledge how Ic depends on VBE (exponential law) you simply can create two equations for Ic1=f(VBE1) and Ic2=f(VBE2)
As a next step, find the ratio Ic2/Ic1 and use your knowledge for dividing two exponential expressions. That`s all.
 
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