Electron Density when Introducing Impurites

AI Thread Summary
Calculating electron densities in the presence of impurities primarily involves determining carrier density, particularly in doped semiconductors. In N-type materials, the carrier density is approximately equal to the donor impurity density, as dopant impurities are largely ionized at room temperature. For P-type materials, the relationship between intrinsic carrier density and charge carrier densities can be expressed using the equation ni^2 = pn, allowing for the calculation of electron density. Understanding these principles is crucial for accurate modeling of semiconductor behavior. This topic is further elaborated in the provided resource.
PeoplesChamp
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How do you go about calculating electron densities, especially when impurities are involved?
 
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PeoplesChamp said:
How do you go about calculating electron densities, especially when impurities are involved?

I assume you are referring to carrier density, since even in doped semiconductor the overall electron density is essentially unchanged since the dopant density is so low compared to the number of lattice sites.

Given that assumption, dopant impurities are almost entirely ionized at room temperature. So, in N-type material the carrier density is equal to Nd which is the donor impurity density. In P-type material you would use the equation ni^2 = pn where ni is the intrinsic carrier density (due to thermal effects), p is the hole density and n is the electron density, so in that case, n = (ni^2)/p.

This is all well explained on the following web page:

http://ecee.colorado.edu/~bart/book/book/chapter2/ch2_6.htm#2_6_4
 
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